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SIDC56D170E6 Dataheets PDF



Part Number SIDC56D170E6
Manufacturers Infineon
Logo Infineon
Description Fast switching diode
Datasheet SIDC56D170E6 DatasheetSIDC56D170E6 Datasheet (PDF)

SIDC56D170E6 Fast switching diode chip in Emitter Controlled -Technology A Features: This chip is used for: • 1700V technology, Emitter Controlled • soft, fast switching • power modules and discrete devices • low reverse recovery charge • small temperature coefficient Applications: • SMPS, resonant applications, C drives Chip Type SIDC56 D170E6 VR IF 1700V 75A Die Size 7.5 x 7.5mm2 Package sawn on foil Mechanical Parameter Raster size Area total Anode pad size Thickness Wafer si.

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SIDC56D170E6 Fast switching diode chip in Emitter Controlled -Technology A Features: This chip is used for: • 1700V technology, Emitter Controlled • soft, fast switching • power modules and discrete devices • low reverse recovery charge • small temperature coefficient Applications: • SMPS, resonant applications, C drives Chip Type SIDC56 D170E6 VR IF 1700V 75A Die Size 7.5 x 7.5mm2 Package sawn on foil Mechanical Parameter Raster size Area total Anode pad size Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 7.5 x 7.5 56.25 mm 2 5.48 x 5.48 200 µm 150 mm 247 Photoimide 3200 nm AlSiCu Ni Ag –system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, ≤500µm ∅ 0.65mm; max 1.2mm Store in original container, in dry nitrogen,in dark environment, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies, AIM PMD D CID CLS, L4251N, Edition 1.2, 28.0 7.2008 SIDC56D170E6 Maximum Ratings Parameter Symbo l Condition Repetitive peak reverse voltage Continuous forward current VRRM IF Tvj = 25 °C Tvj < 150°C Maximum repetitive forward current I FRM Tvj < 150°C Junction temperature range T vj Operating junction temperature T vj Dynamic ruggedness²) P max I Fm a x = 150A, V R max = 1700V Tvj ≤ 150°C 1) depending on thermal properties of assembly 2) not subject to production test - verified by design/characterisation Value 1700 1) 150 -40...+175 -40...+150 tbd Unit V A °C °C kW Static Characteristic (tested on wafer), Tvj = 25 °C Parameter Symbol Conditions Reverse leakage current I R Cathode -Anode breakdown Voltage V BR Diode forward voltage VF VR=17 00V I R= 5m A I F= 75 A min. 170 0 Value typ. 2.15 max. 27 Unit µA V V Further Electrical Characteristic Switching characteristics and thermal properties are depending strongly on module design and mounting technology and can therefore not be specified for a bare die. Edited by INFINEON Technologies, AIM PMD D CID CLS, L4251N, Edition 1.2, 28.0 7.2008 Chip Drawing SIDC56D170E6 A A: Anode pad Edited by INFINEON Technologies, AIM PMD D CID CLS, L4251N, Edition 1.2, 28.0 7.2008 SIDC56D170E6 Description AQL 0.65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intel.


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