Document
SIDC56D170E6
Fast switching diode chip in Emitter Controlled -Technology
A
Features:
This chip is used for:
• 1700V technology, Emitter Controlled • soft, fast switching
• power modules and discrete devices
• low reverse recovery charge • small temperature coefficient
Applications: • SMPS, resonant applications,
C
drives
Chip Type SIDC56 D170E6
VR
IF
1700V 75A
Die Size 7.5 x 7.5mm2
Package sawn on foil
Mechanical Parameter Raster size Area total Anode pad size Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size Recommended storage environment
7.5 x 7.5 56.25
mm 2
5.48 x 5.48
200
µm
150
mm
247
Photoimide
3200 nm AlSiCu
Ni Ag –system suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, ≤500µm
∅ 0.65mm; max 1.2mm
Store in original container, in dry nitrogen,in dark environment, < 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies, AIM PMD D CID CLS, L4251N, Edition 1.2, 28.0 7.2008
SIDC56D170E6
Maximum Ratings
Parameter
Symbo l
Condition
Repetitive peak reverse voltage Continuous forward current
VRRM IF
Tvj = 25 °C Tvj < 150°C
Maximum repetitive forward current I FRM
Tvj < 150°C
Junction temperature range
T vj
Operating junction temperature
T vj
Dynamic ruggedness²)
P max
I Fm a x = 150A, V R max = 1700V Tvj ≤ 150°C
1) depending on thermal properties of assembly 2) not subject to production test - verified by design/characterisation
Value 1700
1)
150 -40...+175 -40...+150
tbd
Unit V A
°C °C kW
Static Characteristic (tested on wafer), Tvj = 25 °C
Parameter
Symbol
Conditions
Reverse leakage current I R
Cathode -Anode breakdown Voltage
V BR
Diode forward voltage
VF
VR=17 00V I R= 5m A I F= 75 A
min. 170 0
Value typ.
2.15
max. 27
Unit µA
V
V
Further Electrical Characteristic
Switching characteristics and thermal properties are depending strongly on module design and mounting technology and can therefore not be specified for a bare die.
Edited by INFINEON Technologies, AIM PMD D CID CLS, L4251N, Edition 1.2, 28.0 7.2008
Chip Drawing
SIDC56D170E6
A
A: Anode pad
Edited by INFINEON Technologies, AIM PMD D CID CLS, L4251N, Edition 1.2, 28.0 7.2008
SIDC56D170E6
Description AQL 0.65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883
Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved.
Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intel.