SIDC78D170H

SIDC78D170H Fast switching diode chip in EMCON 3 -Technology FEATURES: 1700V EMCON 3 technology 200 µm chip This chip is used for: soft, fast switching EUPEC power modules A low reverse recovery charge small temperature coefficient Applications: resonant applications, drives C Chip Type SIDC78D170H VR IF Die Size Package Ordering Code 1700V 150A 7.35 x 10.65 mm2 sawn on foil Q67050-A4177A001 MECHANICAL PARAMETER: Raster size Area total / active Anode pad size Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metallization Cathode metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 7.35 x 10.65 78.28 / 61.82 mm2 5.33 x 8.63 200 µm 150 mm 180 deg 178 pcs Photoimide 3200 nm Al Si Cu Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, ≤500µm ∅ 0.65mm; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies AI DP PSD CLS, L 4451A, Edition 2, 2.11.2004 SIDC78D170H Maximum Ratings Parameter Symbol Repetitive peak reverse voltage VRRM Continuous forward current limited by Tjmax IF Single pulse forward current (depending on wire bond configuration) IFSM Maximum repetitive forward current limited by Tjmax I FRM Operating junction and storage temperature Tj , Tstg Condition tP = 10 ms sinusoidal Value Unit 1700 V 150 ...