SIDC38D65C8

SIDC38D65C8 Fast switching diode chip in EMCON 3 -Technology A Features: 650V EMCON 3 technology 65 µm chip Recommended for: Power module Soft, fast switching Low reverse recovery charge C Small temperature coefficient Applications: Qualified according to JEDEC for target Drives applications White goods Resonant applications Chip Type VR I 1) Fn Die Size Package SIDC38D65C8 650V 150A 4.9 x 7.8 mm2 sawn on foil 1 ) nominal forward current at Tc = 100°C, not subject to production test - verified by design/characterisation Mechanical Parameters Die size Area total Anode pad size Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal 4.9 x 7.8 38.22 4.2 x 7.1 65 200 694 Photoimide 3200 nm AlSiCu mm2 µm mm Backside metal Ni Ag –system Die bond Electrically conductive epoxy glue and soft solder Wire bond Reject ink dot size Storage environment for original and sealed MBB bags for open MBB bags Al, ≤500µm ∅ 0.65mm; max 1.2mm Ambient atmosphere air, Temperature 17°C – 25°C, < 6 month Acc. to IEC62258-3: Atmosphere >99% Nitrogen or inert gas, Humidity <25%RH, Temperature 17°C – 25°C, < 6 month Edited by INFINEON Technologies, IFAG IMM PSD D, L4030C, Edition 1.0, 12.09.2011 SIDC38D65C8 Maximum Ratings Parameter Symbol Condition Repetitive peak reverse voltage VRRM Tvj = 25 °C Continuous forward current IF Maximum repetitive forward current²) I F R M Tvj < 150°C Tvj < 150°C Operating junction tem...