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SIDC26D65C8 Dataheets PDF



Part Number SIDC26D65C8
Manufacturers Infineon
Logo Infineon
Description Fast switching diode
Datasheet SIDC26D65C8 DatasheetSIDC26D65C8 Datasheet (PDF)

SIDC26D65C8 Fast switching diode chip in EMCON 3 -Technology A Features: • 650V EMCON 3 technology 65 µm chip Recommended for: • Power module • Soft, fast switching • Low reverse recovery charge C • Small temperature coefficient Applications: • Qualified according to JEDEC for target • Drives applications • White goods • Resonant applications Chip Type VR I 1) Fn Die Size Package SIDC26D65C8 650V 100A 6.53 x 4.02 mm2 sawn on foil 1 ) nominal forward current at Tc = 100°C, no.

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SIDC26D65C8 Fast switching diode chip in EMCON 3 -Technology A Features: • 650V EMCON 3 technology 65 µm chip Recommended for: • Power module • Soft, fast switching • Low reverse recovery charge C • Small temperature coefficient Applications: • Qualified according to JEDEC for target • Drives applications • White goods • Resonant applications Chip Type VR I 1) Fn Die Size Package SIDC26D65C8 650V 100A 6.53 x 4.02 mm2 sawn on foil 1 ) nominal forward current at Tc = 100°C, not subject to production test - verified by design/characterisation Mechanical Parameters Die size Area total Anode pad size Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal 6.53 x 4.02 26.25 5.83 x 3.32 65 200 1032 Photoimide 3200 nm AlSiCu mm2 µm mm Backside metal Ni Ag –system Die bond Electrically conductive epoxy glue and soft solder Wire bond Reject ink dot size Storage environment for original and sealed MBB bags for open MBB bags Al, ≤500µm ∅ 0.65mm; max 1.2mm Ambient atmosphere air, Temperature 17°C – 25°C, < 6 month Acc. to IEC62258-3: Atmosphere >99% Nitrogen or inert gas, Humidity <25%RH, Temperature 17°C – 25°C, < 6 month Edited by INFINEON Technologies, IFAG IMM PSD D, L4028C, Edition 1.0, 12.09.2011 SIDC26D65C8 Maximum Ratings Parameter Symbol Condition Repetitive peak reverse voltage VRRM Tvj = 25 °C Continuous forward current IF Maximum repetitive forward current²) I F R M Tvj < 150°C Tvj < 150°C Operating junction temperature Tvj 1 ) depending on thermal properties of assembly 2 ) not subject to production test - verified by design/characterisation Value 650 1) 200 -40...+175 Unit V A °C Static Characteristics (tested on wafer), Tvj = 25 °C Parameter Symbol Conditions Reverse leakage current IR Cathode-Anode breakdown Voltage VBR Forward voltage drop VF VR=650V IR=0.25mA IF=30A Value Unit min. typ. max. 1.2 µA 650 V 1.03 1.17 1.32 Electrical Characteristics (not subject to production test - verified by design/characterization) Parameter Symbol Conditions Value Unit min. typ. max. Forward voltage Tvj = 25°C drop Tvj = 150°C VF IF=100A 1.55 1.95 V 1.45 Further Electrical Characteristics Switching characteristics and thermal properties are depending strongly on module design and mounting technology and can therefore not be specified for a bare die. This chip data sheet refers to the device data sheet FS100R07N3E4_B11 Rev. 2.0 Edited by INFINEON Technologies, IFAG IMM PSD D, L4028C, Edition 1.0, 12.09.2011 Chip Drawing SIDC26D65C8 A A: Anode pad Edited by INFINEON Technologies, IFAG IMM PSD D, L4028C, Edition 1.0, 12.09.2011 SIDC26D65C8 Description AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) Date Published by Infineon Technologies AG 81726 Munich, Germany © 2011 Infineon Technologies AG All .


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