Document
SIDC26D65C8
Fast switching diode chip in EMCON 3 -Technology
A
Features: • 650V EMCON 3 technology 65 µm chip
Recommended for: • Power module
• Soft, fast switching
• Low reverse recovery charge
C
• Small temperature coefficient
Applications:
• Qualified according to JEDEC for target • Drives
applications
• White goods
• Resonant applications
Chip Type
VR
I 1)
Fn
Die Size
Package
SIDC26D65C8 650V 100A 6.53 x 4.02 mm2
sawn on foil
1 ) nominal forward current at Tc = 100°C, not subject to production test - verified by design/characterisation
Mechanical Parameters Die size Area total Anode pad size Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal
6.53 x 4.02 26.25
5.83 x 3.32 65 200 1032 Photoimide
3200 nm AlSiCu
mm2
µm mm
Backside metal
Ni Ag –system
Die bond
Electrically conductive epoxy glue and soft solder
Wire bond
Reject ink dot size
Storage environment
for original and sealed MBB bags
for open MBB bags
Al, ≤500µm
∅ 0.65mm; max 1.2mm
Ambient atmosphere air, Temperature 17°C – 25°C, < 6 month
Acc. to IEC62258-3: Atmosphere >99% Nitrogen or inert gas, Humidity <25%RH, Temperature 17°C – 25°C, < 6 month
Edited by INFINEON Technologies, IFAG IMM PSD D, L4028C, Edition 1.0, 12.09.2011
SIDC26D65C8
Maximum Ratings Parameter
Symbol
Condition
Repetitive peak reverse voltage
VRRM
Tvj = 25 °C
Continuous forward current
IF
Maximum repetitive forward current²) I F R M
Tvj < 150°C Tvj < 150°C
Operating junction temperature
Tvj
1 ) depending on thermal properties of assembly 2 ) not subject to production test - verified by design/characterisation
Value 650
1)
200 -40...+175
Unit V A °C
Static Characteristics (tested on wafer), Tvj = 25 °C
Parameter
Symbol
Conditions
Reverse leakage current
IR
Cathode-Anode breakdown Voltage
VBR
Forward voltage drop
VF
VR=650V IR=0.25mA
IF=30A
Value Unit
min. typ. max.
1.2
µA
650 V
1.03 1.17 1.32
Electrical Characteristics (not subject to production test - verified by design/characterization)
Parameter
Symbol
Conditions
Value Unit
min. typ. max.
Forward voltage Tvj = 25°C
drop
Tvj = 150°C
VF
IF=100A
1.55 1.95 V
1.45
Further Electrical Characteristics
Switching characteristics and thermal properties are depending strongly on module design and mounting technology and can therefore not be specified for a bare die.
This chip data sheet refers to the device data sheet
FS100R07N3E4_B11
Rev. 2.0
Edited by INFINEON Technologies, IFAG IMM PSD D, L4028C, Edition 1.0, 12.09.2011
Chip Drawing
SIDC26D65C8
A
A: Anode pad
Edited by INFINEON Technologies, IFAG IMM PSD D, L4028C, Edition 1.0, 12.09.2011
SIDC26D65C8
Description AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883
Revision History
Version
Subjects (major changes since last revision)
Date
Published by Infineon Technologies AG 81726 Munich, Germany © 2011 Infineon Technologies AG All .