SIDC06D60C8

SIDC06D60C8 Fast switching diode chip in Emitter Controlled 3 -Technology A Features: 600V Emitter Controlled 3 technology 70 µm chip This chip is used for: Power module Discrete components soft, fast switching C low reverse recovery charge Applications: small temperature coefficient Drives White goods Resonant applications Chip Type SIDC06D60C8 VR IF 600V 20A Die Size 2.34 x 2.42 mm2 Package sawn on foil Mechanical Parameters Raster size Area total Anode pad size Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 2.34 x 2.42 5.66 mm2 1.91 x 1.99 70 µm 200 mm 4923 Photoimide 3200 nm AlSiCu Ni Ag –system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, ≤500µm ∅ 0.65mm; max 1.2mm Store in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies, IMM PSD, L4017M, Edition 1.2, 08.07.10 SIDC06D60C8 Maximum Ratings Parameter Symbol Condition Repetitive peak reverse voltage Continuous forward current Maximum repetitive forward current Junction temperature range Operating junction temperature Dynamic ruggedness²) VRRM IF IFRM Tvj Tvj Pmax Tvj = 25 °C Tvj < 150°C Tvj < 150°C I F m a x = 40A, V R m a x = 600V, Tvj ≤ 150°C 1 ) depending on thermal properties of assembly 2 ) not subject to producti...