SIDC112D170H

Fast switching diode Features: 1700V technology, Emitter Controlled Diode 3th generation, 200 µm chip soft, fast switching low reverse recovery charge small temperature coefficient SIDC112D170H A This chip is used for: power modules C Applications: resonant applications, drives Chip Type SIDC112D170H VR IF 1700V 205A Die Size 11.8 x 9.52 mm2 Package sawn on foil Mechanical Parameters Raster size Area total Anode pad size Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 11.8 x 9.52 112.3 mm2 9.78 x 7.5 200 µm 150 mm 114 Photoimide 3200 nm AlSiCu Ni Ag –system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, ≤500µm ∅ 0.65mm; max 1.2mm Store in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies, IMM PSD, L4502A, Edition 0.9, 22.02.2010 SIDC112D170H Maximum Ratings Parameter Symbol Condition Repetitive peak reverse voltage VRRM Tvj = 25 °C Continuous forward current IF Tvj < 150°C Maximum repetitive forward current I F R M Tvj < 150°C Junction temperature range Tvj Operating junction temperature Tvj Dynamic ruggedness²) Pmax I F m a x = 410A, V R m a x = 1700V, Tvj ≤ 150°C 1 ) depending on thermal properties of assembly 2 ) not subject to production test - verified by design/characteris...