DatasheetsPDF.com

IGC114T170S8RH Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part IGC114T170S8RH
Description IGBT
Feature IGC114T170S8RH IGBT3 Power Chip Featur es:
• 1700V Trench + Field stop techn ology
• low switching losses and satu ration losses
• soft turn off
• pos itive temperature coefficient
• easy paralleling This chip is used for:
• power modules Applications:
• drives Chip Type VCE IC Die Size IGC114T 170S8RH 1700V 100A 9.
47 x 12.
08 mm2 C G E Package sawn on foil Mechanical Pa rameters Raster size Emitter pad size ( incl.
gate pad) Gate pad size Area tota l Thickness Wafer size Max.
possible chi ps per wafer Passivation frontside Pad metal Backside metal 9.
47 x 12.
08 7.
2 54 x 9.
858 1.
674 x 0.
899 mm .
Manufacture Infineon
Datasheet
Download IGC114T170S8RH Datasheet
Part IGC114T170S8RH
Description IGBT
Feature IGC114T170S8RH IGBT3 Power Chip Featur es:
• 1700V Trench + Field stop techn ology
• low switching losses and satu ration losses
• soft turn off
• pos itive temperature coefficient
• easy paralleling This chip is used for:
• power modules Applications:
• drives Chip Type VCE IC Die Size IGC114T 170S8RH 1700V 100A 9.
47 x 12.
08 mm2 C G E Package sawn on foil Mechanical Pa rameters Raster size Emitter pad size ( incl.
gate pad) Gate pad size Area tota l Thickness Wafer size Max.
possible chi ps per wafer Passivation frontside Pad metal Backside metal 9.
47 x 12.
08 7.
2 54 x 9.
858 1.
674 x 0.
899 mm .
Manufacture Infineon
Datasheet
Download IGC114T170S8RH Datasheet

IGC114T170S8RH

IGC114T170S8RH
IGC114T170S8RH

IGC114T170S8RH

Recommended third-party IGC114T170S8RH Datasheet

 

 

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)