IGC114T170S8RH

IGC114T170S8RH IGBT3 Power Chip Features: 1700V Trench + Field stop technology low switching losses and saturation losses soft turn off positive temperature coefficient easy paralleling This chip is used for: power modules Applications: drives Chip Type VCE IC Die Size IGC114T170S8RH 1700V 100A 9.47 x 12.08 mm2 C G E Package sawn on foil Mechanical Parameters Raster size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal Backside metal 9.47 x 12.08 7.254 x 9.858 1.674 x 0.899 mm2 114.4 190 µm 200 mm 219 Photoimide 3200 nm AlSiCu Ni Ag –system suitable for epoxy and soft solder die bonding Die bond Electrically conductive glue or solder Wire bond Reject ink dot size for original and sealed MBB bags Storage environment for open MBB bags Al, <500µm ∅ 0.65mm ; max 1.2mm Ambient atmosphere air, Temperature 17°C – 25°C, < 6 month Acc. to IEC62258-3: Atmosphere >99% Nitrogen or inert gas, Humidity <25%RH, Temperature 17°C – 25°C, < 6 month Edited by INFINEON Technologies, IMM PSD, L7783N, Edition 0.9, 23.03.2011 IGC114T170S8RH Maximum Ratings Parameter Symbol Value Unit Collector-Emitter voltage, Tvj =25 °C DC collector current, limited by Tvj max VCE IC 1700 V 1) A Pulsed collector current, tp limited by Tvj max Ic,puls 300 A Gate emitter voltage VGE ±20 V Junction temperature range Tvj Operating junction temperature Tvj Short ci...