IDC73D120T6H

IDC73D120T6H Diode EMCON 4 High Power Chip FEATURES: 1200V EMCON 4 technology soft, fast switching This chip is used for: medium / high power modules A low reverse recovery charge small temperature coefficient C Applications: medium / high power drives Chip Type IDC73D120T6H VR IF 1200V 150A Die Size 8.15 x 9.00 mm2 Package sawn on foil MECHANICAL PARAMETER: Raster size Area total / active Anode pad size Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Pad metall Backside metall Die bond Wire bond Reject ink dot size Recommended storage environment 8.15 x 9.00 73.35 / 59.89 mm2 7.196 x 8.046 120 µm 150 mm 180 deg 187 pcs Photoimide 3200 nm AlSiCu Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, ≤500µm ∅ 0.65mm; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies, AIM PMD D CID T, L4675A, Edition 0.9, 26.06.07 IDC73D120T6H Maximum Ratings Parameter Symbol Condition Value Unit Repetitive peak reverse voltage Continuous forward current limited by Tjmax Maximum repetitive forward current limited by Tjmax Maximum junction and storage temperature Reverse bias safe operating area2) (RBSOA) VRRM IF IFRM 1200 V 1) A 300 Tvj,max , Tstg -40...+175 °C I F , m a x = 300A, V R , m a x = 1200V, Tvj,op ≤ 150°C, P max = tbd kW 1 ) depending on thermal properties o...