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IRGB4061DPbF Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part IRGB4061DPbF
Description IGBT
Feature PD - 97189B INSULATED GATE BIPOLAR TRAN SISTOR WITH ULTRAFAST SOFT RECOVERY DIO DE Features
• Low VCE (ON) Trench IG BT Technology
• Low switching losses
• Maximum Junction temperature 175 ° C
• 5 μS short circuit SOA
• Squar e RBSOA
• 100% of the parts tested fo r 4X rated current (ILM)
• Positive V CE (ON) Temperature co-efficient
• Ul tra fast soft Recovery Co-Pak Diode
• Tight parameter distribution
• Lead Free Package C G E n-channel IRGB4061 DPbF VCES = 600V IC = 18A, TC = 100°C tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ.
= 1.
65V Benefits
• High Efficie ncy in a wide range of applications
• Suita .
Manufacture International Rectifier
Datasheet
Download IRGB4061DPbF Datasheet
Part IRGB4061DPbF
Description IGBT
Feature PD - 97189B INSULATED GATE BIPOLAR TRAN SISTOR WITH ULTRAFAST SOFT RECOVERY DIO DE Features
• Low VCE (ON) Trench IG BT Technology
• Low switching losses
• Maximum Junction temperature 175 ° C
• 5 μS short circuit SOA
• Squar e RBSOA
• 100% of the parts tested fo r 4X rated current (ILM)
• Positive V CE (ON) Temperature co-efficient
• Ul tra fast soft Recovery Co-Pak Diode
• Tight parameter distribution
• Lead Free Package C G E n-channel IRGB4061 DPbF VCES = 600V IC = 18A, TC = 100°C tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ.
= 1.
65V Benefits
• High Efficie ncy in a wide range of applications
• Suita .
Manufacture International Rectifier
Datasheet
Download IRGB4061DPbF Datasheet

IRGB4061DPbF

IRGB4061DPbF
IRGB4061DPbF

IRGB4061DPbF

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