Document
VCES = 600V IC = 30A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 18A
Applications • Industrial Motor Drive • Inverters • UPS • Welding
IR IGBT IRGB4630DPbF IRGIB4630DPbF IRGP4630D(-E)PbF IRGS4630DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
C
C
E C G
IRGB4630DPbF TO-220AB
C
GC E
IRGP4630DPbF TO-247AC
GCE IRGP4630D-EPbF
TO-247AD
C
G
E
n-channel
G Gate
E GC
IRGIB4630DPbF TO-220AB Full-Pak
C Collector
GC E
IRGS4630DPbF D2Pak
E Emitter
Features
Benefits
Low VCE(ON) and switching losses
High efficiency in a wide range of applications and switching frequencies
Square RBSOA and maximum junction temperature 175°C
Improved reliability due to rugged hard switching performance and high power capability
Positive VCE (ON) temperature coefficient of parameters
and
tight
distribution
Excellent current
sharing
in parallel operation
5µs Short Circuit SOA
Enables short circuit protection scheme
Lead-Free, RoHS Compliant
Environmentally friendly
Base part number
IRGB4630DPbF IRGIB4630DPbF IRGP4630DPbF IRGP4630D-EPbF
IRGS4630DPbF
Package Type
TO-220AB TO-220AB Full-Pak
TO-247AC TO-247AD
D2Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tube
25
Tube
25
Tube
50
Tape and Reel Right
800
Tape and Reel Left
800
Orderable Part Number
IRGB4630DPbF IRGIB4630DPbF IRGP4630DPbF IRGP4630D-EPbF IRGS4630DPbF IRGS4630DTRRPbF IRGS4630DTRLPbF
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2015-11-23
IRGB/IB/P/S4630D/EPbF
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE
PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=15V Clamped Inductive Load Current, VGE=20V Diode Continuous Forward Current Diode Continuous Forward Current
Diode Maximum Forward Current Continuous Gate-to-Emitter Voltage Transient Gate to Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. (1.6mm from case) Mounting Torque, 6-32 or M3 Screw (TO-220, TO-247)
Max.
600 47 30 54 72 30 18 72 ±20 ±30 206 103 -40 to +175
300 10 lbf·in (1.1 N·m)
Units V A
V W C
Thermal Resistance
Parameter RθJC (IGBT) Thermal Resistance Junction-to-Case (D2Pak, TO-220)
Thermal Resistance Junction-to-Case (TO-220 Full-Pak)
Thermal Resistance Junction-to-Case (TO-247)
RθJC (Diode) Thermal Resistance Junction-to-Case (D2Pak, TO-220) Thermal Resistance Junction-to-Case (TO-220 Full-Pak)
Thermal Resistance Junction-to-Case (TO-247)
RθCS
Thermal Resistance, Case-to-Sink (flat, greased surface-TO-220, D2Pak, TO-220 Full-Pak )
Thermal Resistance Case-to-Sink (TO-247)
RθJA
Thermal Resistance, Junction-to-Ambient (PCB Mount - D2Pak)
Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-220)
Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-247)
Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-220 Full-Pak)
Min. ––– ––– ––– ––– ––– –––
–––
––– ––– ––– ––– –––
Typ. ––– ––– ––– ––– ––– –––
0.5
0.24 ––– ––– ––– –––
Max. 0.73 3.4 0.78 2.0 4.6 2.1
–––
Units °C/W
––– 40 62 40 65
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600
ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage —
—
— 0.40 1.65
VCE(on)
Collector-to-Emitter Saturation Voltage
—
2.05
—
2.15
VGE(th)
ΔVGE(th)/ΔTJ gfe
Gate Threshold Voltage Threshold Voltage Temp. Coefficient Forward Transconductance
4.0
—
—
-18
—
12
ICES
Collector-to-Emitter Leakage Current
—
2.0
—
550
IGES
Gate-to-Emitter Leakage Current
VFM
Diode Forward Voltage Drop
—
—
—
2.3
—
1.6
Max. — —
1.95 — — 6.5 —
— 25 — ±100 3.3 —
Units
Conditions
V VGE = 0V, IC = 100µA V/°C VGE = 0V, IC = 1mA (25°C-175°C)
IC = 18A, VGE = 15V, TJ = 25°C V IC = 18A, VGE = 15V, TJ = 150°C
IC = 18A, VGE = 15V, TJ = 175°C
V VCE = VGE, IC = 500µA mV/°C VCE = VGE, IC = 1.0mA (25°C-175°C)
S VCE = 50V, IC = 18A, PW = 80µs µA VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 175°C
nA VGE = ±20V V IF = 18A
IF = 18A, TJ = 175°C
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2015-11-23
IRGB/IB/P/S4630D/EPbF
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
Qg
Total Gate Charge
—
35
Qge
Gate-to-Emitter Charge
Qgc
Gate-to-Collector Charge
—
10
—
15
Eon
Turn-On Switching Loss
—
95
Eoff Etotal
Turn-Off Switching Loss Total Switching Loss
—
350
—
445
td(on)
Turn-On delay time
—
40
tr
Rise time
td(off)
Turn-Off delay time
—
25
—
105
tf
Fall time
Eon
Turn-On Switching Loss
—
25
—
2.