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IRGP4630D-EPbf Dataheets PDF



Part Number IRGP4630D-EPbf
Manufacturers Infineon
Logo Infineon
Description IGBT
Datasheet IRGP4630D-EPbf DatasheetIRGP4630D-EPbf Datasheet (PDF)

VCES = 600V IC = 30A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 18A Applications • Industrial Motor Drive • Inverters • UPS • Welding IR IGBT IRGB4630DPbF IRGIB4630DPbF IRGP4630D(-E)PbF IRGS4630DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C C E C G IRGB4630DPbF TO-220AB C GC E IRGP4630DPbF TO-247AC GCE IRGP4630D-EPbF TO-247AD C G E n-channel G Gate E GC IRGIB4630DPbF TO-220AB Full-Pak C Collector GC E IRGS4630DPbF D2Pak E Emitter F.

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VCES = 600V IC = 30A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 18A Applications • Industrial Motor Drive • Inverters • UPS • Welding IR IGBT IRGB4630DPbF IRGIB4630DPbF IRGP4630D(-E)PbF IRGS4630DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C C E C G IRGB4630DPbF TO-220AB C GC E IRGP4630DPbF TO-247AC GCE IRGP4630D-EPbF TO-247AD C G E n-channel G Gate E GC IRGIB4630DPbF TO-220AB Full-Pak C Collector GC E IRGS4630DPbF D2Pak E Emitter Features Benefits Low VCE(ON) and switching losses High efficiency in a wide range of applications and switching frequencies Square RBSOA and maximum junction temperature 175°C Improved reliability due to rugged hard switching performance and high power capability Positive VCE (ON) temperature coefficient of parameters and tight distribution Excellent current sharing in parallel operation 5µs Short Circuit SOA Enables short circuit protection scheme Lead-Free, RoHS Compliant Environmentally friendly Base part number IRGB4630DPbF IRGIB4630DPbF IRGP4630DPbF IRGP4630D-EPbF IRGS4630DPbF Package Type TO-220AB TO-220AB Full-Pak TO-247AC TO-247AD D2Pak Standard Pack Form Quantity Tube 50 Tube 50 Tube 25 Tube 25 Tube 50 Tape and Reel Right 800 Tape and Reel Left 800 Orderable Part Number IRGB4630DPbF IRGIB4630DPbF IRGP4630DPbF IRGP4630D-EPbF IRGS4630DPbF IRGS4630DTRRPbF IRGS4630DTRLPbF 1 2015-11-23 IRGB/IB/P/S4630D/EPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=15V  Clamped Inductive Load Current, VGE=20V  Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current  Continuous Gate-to-Emitter Voltage Transient Gate to Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. (1.6mm from case) Mounting Torque, 6-32 or M3 Screw (TO-220, TO-247) Max. 600 47 30 54 72 30 18 72 ±20 ±30 206 103 -40 to +175 300 10 lbf·in (1.1 N·m) Units V A V W C Thermal Resistance Parameter RθJC (IGBT) Thermal Resistance Junction-to-Case (D2Pak, TO-220) Thermal Resistance Junction-to-Case (TO-220 Full-Pak) Thermal Resistance Junction-to-Case (TO-247) RθJC (Diode) Thermal Resistance Junction-to-Case (D2Pak, TO-220) Thermal Resistance Junction-to-Case (TO-220 Full-Pak) Thermal Resistance Junction-to-Case (TO-247) RθCS Thermal Resistance, Case-to-Sink (flat, greased surface-TO-220, D2Pak, TO-220 Full-Pak ) Thermal Resistance Case-to-Sink (TO-247) RθJA Thermal Resistance, Junction-to-Ambient (PCB Mount - D2Pak)  Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-220) Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-247) Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-220 Full-Pak) Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– ––– ––– ––– ––– 0.5 0.24 ––– ––– ––– ––– Max. 0.73 3.4 0.78 2.0 4.6 2.1 ––– Units °C/W ––– 40 62 40 65 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage — — — 0.40 1.65 VCE(on) Collector-to-Emitter Saturation Voltage — 2.05 — 2.15 VGE(th) ΔVGE(th)/ΔTJ gfe Gate Threshold Voltage Threshold Voltage Temp. Coefficient Forward Transconductance 4.0 — — -18 — 12 ICES Collector-to-Emitter Leakage Current — 2.0 — 550 IGES Gate-to-Emitter Leakage Current VFM Diode Forward Voltage Drop — — — 2.3 — 1.6 Max. — — 1.95 — — 6.5 — — 25 — ±100 3.3 — Units Conditions V VGE = 0V, IC = 100µA  V/°C VGE = 0V, IC = 1mA (25°C-175°C) IC = 18A, VGE = 15V, TJ = 25°C V IC = 18A, VGE = 15V, TJ = 150°C IC = 18A, VGE = 15V, TJ = 175°C V VCE = VGE, IC = 500µA mV/°C VCE = VGE, IC = 1.0mA (25°C-175°C) S VCE = 50V, IC = 18A, PW = 80µs µA VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 175°C nA VGE = ±20V V IF = 18A IF = 18A, TJ = 175°C 2 2015-11-23 IRGB/IB/P/S4630D/EPbF Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Qg Total Gate Charge — 35 Qge Gate-to-Emitter Charge Qgc Gate-to-Collector Charge — 10 — 15 Eon Turn-On Switching Loss — 95 Eoff Etotal Turn-Off Switching Loss Total Switching Loss — 350 — 445 td(on) Turn-On delay time — 40 tr Rise time td(off) Turn-Off delay time — 25 — 105 tf Fall time Eon Turn-On Switching Loss — 25 — 2.


IRGP4630DPbf IRGP4630D-EPbf IRGS4630DPbF


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