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IDP12E120 Dataheets PDF



Part Number IDP12E120
Manufacturers Infineon
Logo Infineon
Description Fast Switching Diode
Datasheet IDP12E120 DatasheetIDP12E120 Datasheet (PDF)

IDP12E120 Fast Switching Diode Features • 1200 V diode technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage • Easy paralleling • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • Qualified according to JEDEC for target applications Product Summary VRRM IF VF Tjmax 1200 V 12 A 1.65 V 150 °C PG-TO220-2 Type IDP12E120 Package PG-TO220-2 Ordering Code Marking Pin 1 PIN 2 PIN 3 - D12E120 C A - Maximum Ratings, at T.

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IDP12E120 Fast Switching Diode Features • 1200 V diode technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage • Easy paralleling • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • Qualified according to JEDEC for target applications Product Summary VRRM IF VF Tjmax 1200 V 12 A 1.65 V 150 °C PG-TO220-2 Type IDP12E120 Package PG-TO220-2 Ordering Code Marking Pin 1 PIN 2 PIN 3 - D12E120 C A - Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Repetitive peak reverse voltage Continous forward current TC=25°C TC=90°C VRRM IF Surge non repetitive forward current TC=25°C, tp=10 ms, sine halfwave Maximum repetitive forward current TC=25°C, tp limited by Tjmax, D=0.5 Power dissipation TC=25°C TC=90°C IFSM IFRM Ptot Operating and storage temperature Soldering temperature wavesoldering, 1.6mm (0.063 in.) from case for 10s Tj , Tstg TS Value 1200 28 17 63 42.5 96 46 -55...+150 260 Unit V A W °C °C Rev.2.3 Page 1 2009-08-19 IDP12E120 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) Symbol Values Unit min. typ. max. RthJC RthJA RthJA - - 1.3 K/W - - 62 - - 62 - 35 - Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. max. Static Characteristics Reverse leakage current VR=1200V, Tj=25°C VR=1200V, Tj=150°C IR - - 100 - - 1000 Forward voltage drop IF=12A, Tj=25°C IF=12A, Tj=150°C VF - 1.65 2.15 - 1.7 - Unit µA V 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.2.3 Page 2 2009-08-19 IDP12E120 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. max. Dynamic Characteristics Reverse recovery time VR=800V, IF=12A, diF/dt=800A/µs, Tj=25°C VR=800V, IF=12A, diF/dt=800A/µs, Tj=125°C VR=800V, IF=12A, diF/dt=800A/µs, Tj=150°C trr - 150 - 215 - 225 - Peak reverse current VR=800V, IF = 12 A, diF/dt=800A/µs, Tj=25°C VR=800V, IF =12A, diF/dt=800A/µs, Tj=125°C VR=800V, IF =12A, diF/dt=800A/µs, Tj=150°C Irrm - 17 - - 20.9 - - 21.5 - Reverse recovery charge VR=800V, IF=12A, diF/dt=800A/µs, Tj=25°C VR=800V, IF =12A, diF/dt=800A/µs, Tj=125°C VR=800V, IF =12A, diF/dt=800A/µs, Tj=150°C Qrr - 1200 - 1840 - 2025 - Reverse recovery softness factor S VR=800V, IF=12A, diF/dt=800A/µs, Tj=25°C VR=800V, IF=12A, diF/dt=800A/µs, Tj=125°C VR=800V, IF=12A, diF/dt=800A/µs, Tj=150°C - 5 - - 5.8 - - 5.9 - Unit ns A nC Rev.2.3 Page 3 2009-08-19 IDP12E120 Ptot 1 Power dissipation Ptot = f (TC) parameter: Tj ≤ 150°C 100 W 80 70 60 50 40 30 20 10 0 25 50 75 100 °C 150 TC 3 Typ. diode forward current IF = f (VF) IF 2 Diode forward current IF = f(TC) parameter: Tj≤ 150°C 30 A 20 15 10 5 0 25 50 75 100 °C 150 TC 4 Typ. diode forward voltage VF = f (Tj) IF 36 A -55°C 25°C 28 100°C 150°C 24 20 VF 2.4 24A V 2 1.8 12A 16 1.6 12 6A 1.4 8 1.2 4 0 0 0.5 1 1.5 2 Rev.2.3 V 3 VF 1 -60 -20 20 Page 4 60 100 °C 160 Tj 2009-08-19 IDP12E120 trr 5 Typ. reverse recovery time trr = f (diF/dt) parameter: VR = 800V, Tj = 125°C 800 ns 24A 12A 600 6A 500 400 300 200 100 0 200 300 400 500 600 700 800 A/µs 1000 diF/dt 7 Typ. reverse recovery current Irr = f (diF/dt) parameter: VR = 800V, Tj = 125°C 26 A 22 20 18 16 14 24A 12A 12 6A 10 8 6 200 300 400 500 600 700 800 A/µs 1000 diF/dt S Qrr 6 Typ. reverse recovery charge Qrr=f(diF/dt) parameter: VR = 800V, Tj = 125 °C 2500 nC 24A 2300 2200 2100 2000 12A 1900 1800 1700 1600 6A 1500 1400 1300 200 300 400 500 600 700 800 A/µs 1000 diF/dt 8 Typ. reverse recovery softness factor S = f(diF/dt) parameter: VR = 800V, Tj = 125°C 15 13 24A 12 12A 6A 11 10 9 8 7 6 5 4 3 2 200 300 400 500 600 700 800 A/µs 1000 diF/dt Rev.2.3 Page 5 2009-08-19 Irr ZthJC 9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 1 IDP12E120 K/W 10 0 10 -1 10 -2 10 -3 single pulse D = 0.50 0.20 0.10 0.05 0.02 0.01 10 -4 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp IDP12E120 Rev.2.3 Page 6 2009-08-19 TO-220-2 IDP12E120 Rev.2.3 Page 7 2009-08-19 IDP12E120 PInufibnleisohneTdebcyhnologies AG 81726 Munich, Germany 81726 München, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Techn.


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