Document
IDP12E120
Fast Switching Diode
Features • 1200 V diode technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage • Easy paralleling • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • Qualified according to JEDEC for target applications
Product Summary
VRRM IF VF Tjmax
1200 V 12 A 1.65 V 150 °C
PG-TO220-2
Type IDP12E120
Package PG-TO220-2
Ordering Code Marking Pin 1 PIN 2 PIN 3
-
D12E120 C
A
-
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Repetitive peak reverse voltage Continous forward current
TC=25°C TC=90°C
VRRM IF
Surge non repetitive forward current
TC=25°C, tp=10 ms, sine halfwave
Maximum repetitive forward current
TC=25°C, tp limited by Tjmax, D=0.5
Power dissipation
TC=25°C TC=90°C
IFSM IFRM Ptot
Operating and storage temperature Soldering temperature
wavesoldering, 1.6mm (0.063 in.) from case for 10s
Tj , Tstg TS
Value 1200
28 17 63
42.5
96 46 -55...+150 260
Unit V A
W °C °C
Rev.2.3
Page 1
2009-08-19
IDP12E120
Thermal Characteristics Parameter
Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area 1)
Symbol
Values
Unit
min. typ. max.
RthJC RthJA RthJA
-
-
1.3 K/W
-
-
62
-
-
62
-
35
-
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
Static Characteristics
Reverse leakage current
VR=1200V, Tj=25°C VR=1200V, Tj=150°C
IR
-
- 100
-
- 1000
Forward voltage drop
IF=12A, Tj=25°C IF=12A, Tj=150°C
VF - 1.65 2.15
-
1.7
-
Unit µA V
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.
Rev.2.3
Page 2
2009-08-19
IDP12E120
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
Dynamic Characteristics
Reverse recovery time
VR=800V, IF=12A, diF/dt=800A/µs, Tj=25°C VR=800V, IF=12A, diF/dt=800A/µs, Tj=125°C VR=800V, IF=12A, diF/dt=800A/µs, Tj=150°C
trr - 150 - 215 - 225 -
Peak reverse current
VR=800V, IF = 12 A, diF/dt=800A/µs, Tj=25°C VR=800V, IF =12A, diF/dt=800A/µs, Tj=125°C VR=800V, IF =12A, diF/dt=800A/µs, Tj=150°C
Irrm
-
17
-
- 20.9 -
- 21.5 -
Reverse recovery charge
VR=800V, IF=12A, diF/dt=800A/µs, Tj=25°C VR=800V, IF =12A, diF/dt=800A/µs, Tj=125°C VR=800V, IF =12A, diF/dt=800A/µs, Tj=150°C
Qrr - 1200 - 1840 - 2025 -
Reverse recovery softness factor
S
VR=800V, IF=12A, diF/dt=800A/µs, Tj=25°C VR=800V, IF=12A, diF/dt=800A/µs, Tj=125°C VR=800V, IF=12A, diF/dt=800A/µs, Tj=150°C
-
5
-
-
5.8
-
-
5.9
-
Unit ns A nC
Rev.2.3
Page 3
2009-08-19
IDP12E120
Ptot
1 Power dissipation Ptot = f (TC) parameter: Tj ≤ 150°C
100
W
80
70
60
50
40
30
20
10
0
25
50
75
100
°C
150
TC
3 Typ. diode forward current IF = f (VF)
IF
2 Diode forward current IF = f(TC) parameter: Tj≤ 150°C
30
A
20
15
10
5
0
25
50
75
100
°C
150
TC
4 Typ. diode forward voltage VF = f (Tj)
IF
36
A
-55°C
25°C
28
100°C
150°C
24
20
VF
2.4
24A
V
2
1.8
12A
16
1.6
12
6A
1.4
8
1.2 4
0
0
0.5
1
1.5
2
Rev.2.3
V
3
VF
1
-60
-20
20
Page 4
60
100 °C 160
Tj
2009-08-19
IDP12E120
trr
5 Typ. reverse recovery time trr = f (diF/dt) parameter: VR = 800V, Tj = 125°C
800
ns
24A
12A
600
6A
500
400
300 200 100
0
200 300 400 500 600 700 800 A/µs 1000 diF/dt
7 Typ. reverse recovery current Irr = f (diF/dt) parameter: VR = 800V, Tj = 125°C
26
A
22
20
18
16
14 24A
12A
12
6A
10
8
6
200 300 400 500 600 700 800 A/µs 1000 diF/dt
S
Qrr
6 Typ. reverse recovery charge
Qrr=f(diF/dt) parameter: VR = 800V, Tj = 125 °C
2500
nC
24A 2300
2200
2100
2000
12A
1900
1800
1700
1600 6A
1500
1400
1300
200 300 400 500 600 700 800 A/µs 1000 diF/dt
8 Typ. reverse recovery softness factor S = f(diF/dt) parameter: VR = 800V, Tj = 125°C
15
13 24A
12
12A
6A
11
10
9
8
7
6
5
4
3
2
200 300 400 500 600 700 800 A/µs 1000 diF/dt
Rev.2.3
Page 5
2009-08-19
Irr
ZthJC
9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = tp/T
10 1 IDP12E120 K/W
10 0
10 -1
10 -2
10 -3
single pulse
D = 0.50 0.20 0.10 0.05 0.02 0.01
10
-4
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
IDP12E120
Rev.2.3
Page 6
2009-08-19
TO-220-2
IDP12E120
Rev.2.3
Page 7
2009-08-19
IDP12E120
PInufibnleisohneTdebcyhnologies AG 81726 Munich, Germany 81726 München, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Techn.