Document
F3L300R12MT4P_B22
EconoDUAL™3ModulmitTrench/FeldstoppIGBT4undEmitterControlledHEDiodeundNTC/bereits aufgetragenemThermalInterfaceMaterial EconoDUAL™3modulewithTrench/FieldstopIGBT4andEmitterControlledHEdiodeandNTC/ pre-appliedThermalInterfaceMaterial
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PotentielleAnwendungen • 3-Level-Applikationen
ElektrischeEigenschaften • ErweiterteSperrschichttemperaturTvjop • NiedrigeSchaltverluste • NiedrigesVCEsat • SehrgroßeRobustheit • Tvjop=150°C • VCEsatmitpositivemTemperaturkoeffizienten
MechanischeEigenschaften • IsolierteBodenplatte • Standardgehäuse • Thermisches Interface Material bereits
aufgetragen
VCES = 1200V IC nom = 300A / ICRM = 600A
PotentialApplications • 3-level-applications
ElectricalFeatures • ExtendedoperatingtemperatureTvjop • Lowswitchinglosses • LowVCEsat • Unbeatablerobustness • Tvjop=150°C • VCEsatwithpositivetemperaturecoefficient
MechanicalFeatures • Isolatedbaseplate • Standardhousing • Pre-appliedThermalInterfaceMaterial
ModuleLabelCode
BarcodeCode128
DMX-Code
ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek)
Digit 1-5 6-11 12-19 20-21 22-23
Datasheet www.infineon.com
PleasereadtheImportantNoticeandWarningsattheendofthisdocument
V3.0 2017-08-23
F3L300R12MT4P_B22
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung Collector-emittervoltage
Tvj = 25°C
Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent
TH = 90°C, Tvj max = 175°C
PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent
tP = 1 ms
Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage
VCES IC nom ICRM VGES
1200 300 600 +/-20
V A A V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage
IC = 300 A, VGE = 15 V IC = 300 A, VGE = 15 V IC = 300 A, VGE = 15 V
Tvj = 25°C Tvj = 125°C Tvj = 150°C
Gate-Schwellenspannung Gatethresholdvoltage
IC = 11,5 mA, VCE = VGE, Tvj = 25°C
Gateladung Gatecharge
VGE = -15 V ... +15 V
InternerGatewiderstand Internalgateresistor
Tvj = 25°C
Eingangskapazität Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast Turn-ondelaytime,inductiveload
IC = 300 A, VCE = 600 V VGE = ±15 V RGon = 1,0 Ω
Tvj = 25°C Tvj = 125°C Tvj = 150°C
Anstiegszeit,induktiveLast Risetime,inductiveload
IC = 300 A, VCE = 600 V VGE = ±15 V RGon = 1,0 Ω
Tvj = 25°C Tvj = 125°C Tvj = 150°C
Abschaltverzögerungszeit,induktiveLast Turn-offdelaytime,inductiveload
IC = 300 A, VCE = 600 V VGE = ±15 V RGoff = 1,0 Ω
Tvj = 25°C Tvj = 125°C Tvj = 150°C
Fallzeit,induktiveLast Falltime,inductiveload
IC = 300 A, VCE = 600 V VGE = ±15 V RGoff = 1,0 Ω
Tvj = 25°C Tvj = 125°C Tvj = 150°C
EinschaltverlustenergieproPuls Turn-onenergylossperpulse
IC = 300 A, VCE = 600 V, LS = 35 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 4650 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 1,0 Ω
Tvj = 150°C
AbschaltverlustenergieproPuls Turn-offenergylossperpulse
IC = 300 A, VCE = 600 V, LS = 35 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 3500 V/µs (Tvj = 150°C)Tvj = 125°C
RGoff = 1,0 Ω
Tvj = 150°C
Kurzschlußverhalten SCdata
VGE ≤ 15 V, VCC = 800 V VCEmax = VCES -LsCE ·di/dt
tP ≤ 10 µs, Tvj = 25°C tP ≤ 10 µs, Tvj = 150°C
Wärmewiderstand,ChipbisKühlkörper Thermalresistance,junctiontoheatsink
proIGBT/perIGBT validwithIFXpre-appliedthermalinterfacematerial
TemperaturimSchaltbetrieb Temperatureunderswitchingconditions
min. typ. max.
VCE sat
1,75 2,10 V
2,00
V
2,05
V
VGEth 5,20 5,80 6,40 V
QG
2,25
µC
RGint
2,5
Ω
Cies
19,0
nF
Cres
1,05
nF
ICES
1,0 mA
IGES td on
tr td off
tf
Eon Eoff ISC RthJH
100 nA
0,18
µs
0,20
µs
0,21
µs
0,05
µs
0,06
µs
0,06
µs
0,38
µs
0,48
µs
0,51
µs
0,05
µs
0,08
µs
0,09
µs
18,0
mJ
27,5
mJ
30,5
mJ
17,5
mJ
28,0
mJ
31,5
mJ
1900
A
1400
A
0,105 K/W
Tvj op -40
150 °C
Datasheet
2
V3.0
2017-08-23
F3L300R12MT4P_B22
Diode,Wechselrichter/Diode,Inverter
HöchstzulässigeWerte/MaximumRatedValues
PeriodischeSpitzensperrspannung Repetitivepeakreversevoltage
Tvj = 25°C
Dauergleichstrom ContinuousDCforwardcurrent
PeriodischerSpitzenstrom Repetitivepeakforwardcurrent
tP = 1 ms
Grenzlastintegral I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C VR = 0 V, tP = 10 ms.