Document
TechnischeInformation/TechnicalInformation
IGBT-Module IGBT-modules
FD400R33KF2C-K
IGBT,Brems-Chopper/IGBT,Brake-Chopper
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung Collector-emittervoltage
Tvj = 25°C Tvj = -25°C
Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent
TC = 80°C, Tvj max = 150°C TC = 25°C, Tvj max = 150°C
PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent
tP = 1 ms
Gesamt-Verlustleistung Totalpowerdissipation
TC = 25°C, Tvj max = 150°C
Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage
VorläufigeDaten PreliminaryData
VCES
IC nom IC
ICRM
Ptot
VGES
3300 3300 400 660
800
4,80
+/-20
V
A A
A
kW
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage
IC = 400 A, VGE = 15 V IC = 400 A, VGE = 15 V
Tvj = 25°C Tvj = 125°C
Gate-Schwellenspannung Gatethresholdvoltage
IC = 40,0 mA, VCE = VGE, Tvj = 25°C
Gateladung Gatecharge
VGE = -15 V ... +15 V, VCE = 1800V
InternerGatewiderstand Internalgateresistor
Tvj = 25°C
Eingangskapazität Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent
VCE = 3300 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast Turn-ondelaytime,inductiveload
IC = 400 A, VCE = 1800 V VGE = ±15 V RGon = 2,7 Ω, CGE = 68,0 nF
Tvj = 25°C Tvj = 125°C
Anstiegszeit,induktiveLast Risetime,inductiveload
IC = 400 A, VCE = 1800 V VGE = ±15 V RGon = 2,7 Ω, CGE = 68,0 nF
Tvj = 25°C Tvj = 125°C
Abschaltverzögerungszeit,induktiveLast Turn-offdelaytime,inductiveload
IC = 400 A, VCE = 1800 V VGE = ±15 V RGoff = 3,6 Ω, CGE = 68,0 nF
Tvj = 25°C Tvj = 125°C
Fallzeit,induktiveLast Falltime,inductiveload
IC = 400 A, VCE = 1800 V VGE = ±15 V RGoff = 3,6 Ω, CGE = 68,0 nF
Tvj = 25°C Tvj = 125°C
EinschaltverlustenergieproPuls Turn-onenergylossperpulse
IC = 400 A, VCE = 1800 V, LS = 60 nH VGE = ±15 V RGon = 2,7 Ω, CGE = 68,0 nF
Tvj = 25°C Tvj = 125°C
AbschaltverlustenergieproPuls Turn-offenergylossperpulse
IC = 400 A, VCE = 1800 V, LS = 60 nH VGE = ±15 V RGoff = 3,6 Ω, CGE = 68,0 nF
Tvj = 25°C Tvj = 125°C
Kurzschlußverhalten SCdata
VGE ≤ 15 V, VCC = 2500 V VCEmax = VCES -LsCE ·di/dt
tP ≤ 10 µs, Tvj = 125°C
Wärmewiderstand,ChipbisGehäuse Thermalresistance,junctiontocase
proIGBT/perIGBT
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb Temperatureunderswitchingconditions
VCE sat VGEth QG RGint Cies Cres ICES IGES td on
tr
td off
tf
Eon
Eoff ISC RthJC RthCH Tvj op
min. typ. max. 3,40 4,25 V 4,30 5,00 V
4,2 5,1 6,0 V
8,00 µC
1,3 Ω
50,0 nF
2,70 nF
5,0 mA
400 nA
0,28
µs
0,28 µs
0,18
µs
0,20 µs
1,55
µs
1,70 µs
0,20
µs
0,20 µs
470
mJ
730 mJ
430
mJ
510 mJ
2000
A
26,0 K/kW
12,0
K/kW
-40 125 °C
preparedby:SB approvedby:DTS
dateofpublication:2013-11-25 revision:2.2
1
TechnischeInformation/TechnicalInformation
IGBT-Module IGBT-modules
FD400R33KF2C-K
Diode,Brems-Chopper/Diode,Brake-Chopper
HöchstzulässigeWerte/MaximumRatedValues
PeriodischeSpitzensperrspannung Repetitivepeakreversevoltage
Tvj = 25°C Tvj = -25°C
Dauergleichstrom ContinuousDCforwardcurrent
PeriodischerSpitzenstrom Repetitivepeakforwardcurrent
tP = 1 ms
Grenzlastintegral I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
Spitzenverlustleistung Maximumpowerdissipation
Tvj = 125°C
Mindesteinschaltdauer Minimumturn-ontime
VorläufigeDaten PreliminaryData
VRRM IF IFRM I²t
PRQM ton min
3300 3300 400
800
55,5
800
10,0
V A A kA²s kW µs
CharakteristischeWerte/CharacteristicValues
Durchlassspannung Forwardvoltage
IF = 400 A, VGE = 0 V IF = 400 A, VGE = 0 V
Tvj = 25°C Tvj = 125°C
Rückstromspitze Peakreverserecoverycurrent
IF = 400 A, - diF/dt = 2200 A/µs (Tvj=125°C) Tvj = 25°C
VR = 1800 V
Tvj = 125°C
VGE = -15 V
Sperrverzögerungsladung Recoveredcharge
IF = 400 A, - diF/dt = 2200 A/µs (Tvj=125°C) Tvj = 25°C
VR = 1800 V
Tvj = 125°C
VGE = -15 V
AbschaltenergieproPuls Reverserecoveryenergy
IF = 400 A, - diF/dt = 2200 A/µs (Tvj=125°C) Tvj = 25°C
VR = 1800 V
Tvj = 125°C
VGE = -15 V
Wärmewiderstand,ChipbisGehäuse Thermalresistance,junctiontocase
proDiode/perdiode
Wärmewiderstand,GehäusebisKühlkörper proDiode/perdiode
Thermalresistance,casetoheatsink
λPaste=1W/(m·K).