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DF200R12W1H3_B27 Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part DF200R12W1H3_B27
Description IGBT
Feature TechnischeInformation/TechnicalInfor mation IGBT-Module IGBT-modules DF200 R12W1H3_B27 VorläufigeDaten/Prelim inaryData TypischeAnwendungen
• So larAnwendungen ElektrischeEigenschaft en
• NiedrigeSchaltverluste Mechanis cheEigenschaften
• Al2O3 Substrat mi t kleinem thermischen Widerstand
• In tegrierterNTCTemperaturSensor
• Ko mpaktesDesign
• PressFITVerbindungs technik J VCES = 1200V IC nom = 30A / ICRM = 60A TypicalApplications
• Sol arApplications ElectricalFeatures
• LowSwitchingLosses MechanicalFeatur es
• Al2O3SubstratewithLowThermal Resistance
• IntegratedNTCtemp .
Manufacture Infineon
Datasheet
Download DF200R12W1H3_B27 Datasheet
Part DF200R12W1H3_B27
Description IGBT
Feature TechnischeInformation/TechnicalInfor mation IGBT-Module IGBT-modules DF200 R12W1H3_B27 VorläufigeDaten/Prelim inaryData TypischeAnwendungen
• So larAnwendungen ElektrischeEigenschaft en
• NiedrigeSchaltverluste Mechanis cheEigenschaften
• Al2O3 Substrat mi t kleinem thermischen Widerstand
• In tegrierterNTCTemperaturSensor
• Ko mpaktesDesign
• PressFITVerbindungs technik J VCES = 1200V IC nom = 30A / ICRM = 60A TypicalApplications
• Sol arApplications ElectricalFeatures
• LowSwitchingLosses MechanicalFeatur es
• Al2O3SubstratewithLowThermal Resistance
• IntegratedNTCtemp .
Manufacture Infineon
Datasheet
Download DF200R12W1H3_B27 Datasheet

DF200R12W1H3_B27

DF200R12W1H3_B27
DF200R12W1H3_B27

DF200R12W1H3_B27

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