Document
TechnischeInformation/TechnicalInformation
IGBT-Module IGBT-modules
FF300R12KE3
62mmC-SerienModulmitTrench/FeldstoppIGBT3undEmitterControlledHighEfficiencyDiode 62mmC-seriesmodulewithtrench/fieldstopIGBT3andEmitterControlledHighEfficiencydiode
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung Collector-emittervoltage
Tvj = 25°C
Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent
TC = 80°C, Tvj max = 150°C TC = 25°C, Tvj max = 150°C
PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent
tP = 1 ms
Gesamt-Verlustleistung Totalpowerdissipation
TC = 25°C, Tvj max = 150
Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage
VCES
IC nom IC
ICRM
Ptot
VGES
1200 300 440 600
1450
+/-20
V
A A
A
W
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage
IC = 300 A, VGE = 15 V IC = 300 A, VGE = 15 V
Tvj = 25°C Tvj = 125°C
Gate-Schwellenspannung Gatethresholdvoltage
IC = 12,0 mA, VCE = VGE, Tvj = 25°C
Gateladung Gatecharge
VGE = -15 V ... +15 V
InternerGatewiderstand Internalgateresistor
Tvj = 25°C
Eingangskapazität Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast Turn-ondelaytime,inductiveload
IC = 300 A, VCE = 600 V VGE = ±15 V RGon = 2,4 Ω
Tvj = 25°C Tvj = 125°C
Anstiegszeit,induktiveLast Risetime,inductiveload
IC = 300 A, VCE = 600 V VGE = ±15 V RGon = 2,4 Ω
Tvj = 25°C Tvj = 125°C
Abschaltverzögerungszeit,induktiveLast Turn-offdelaytime,inductiveload
IC = 300 A, VCE = 600 V VGE = ±15 V RGoff = 2,4 Ω
Tvj = 25°C Tvj = 125°C
Fallzeit,induktiveLast Falltime,inductiveload
IC = 300 A, VCE = 600 V VGE = ±15 V RGoff = 2,4 Ω
Tvj = 25°C Tvj = 125°C
EinschaltverlustenergieproPuls Turn-onenergylossperpulse
IC = 300 A, VCE = 600 V, LS = 60 nH VGE = ±15 V, di/dt = 6000 A/µs RGon = 2,4 Ω
Tvj = 25°C Tvj = 125°C
AbschaltverlustenergieproPuls Turn-offenergylossperpulse
IC = 300 A, VCE = 600 V, LS = 60 nH VGE = ±15 V, du/dt = 4000 V/µs RGoff = 2,4 Ω
Tvj = 25°C Tvj = 125°C
Kurzschlußverhalten SCdata
VGE ≤ 15 V, VCC = 900 V VCEmax = VCES -LsCE ·di/dt
tP ≤ 10 µs, Tvj = 125°C
Wärmewiderstand,ChipbisGehäuse Thermalresistance,junctiontocase
proIGBT/perIGBT
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb Temperatureunderswitchingconditions
VCE sat VGEth QG RGint Cies Cres ICES IGES td on
tr
td off
tf
Eon
Eoff ISC RthJC RthCH Tvj op
min. typ. max.
1,70 2,15 V
2,00
V
5,0 5,8 6,5 V
2,80 µC
2,5 Ω
21,0 nF
0,85 nF
5,0 mA
400 nA
0,25
µs
0,30 µs
0,09
µs
0,10 µs
0,55
µs
0,65 µs
0,13
µs
0,18 µs
17,0
mJ
25,0 mJ
29,5
mJ
44,0 mJ
1200
A
0,085 K/W
0,031
K/W
-40 125 °C
preparedby:MK approvedby:WR
dateofpublication:2013-10-02 revision:3.2
1
TechnischeInformation/TechnicalInformation
IGBT-Module IGBT-modules
FF300R12KE3
Diode,Wechselrichter/Diode,Inverter
HöchstzulässigeWerte/MaximumRatedValues
PeriodischeSpitzensperrspannung Repetitivepeakreversevoltage
Tvj = 25°C
Dauergleichstrom ContinuousDCforwardcurrent
PeriodischerSpitzenstrom Repetitivepeakforwardcurrent
tP = 1 ms
Grenzlastintegral I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VRRM IF IFRM I²t
1200 300 600 19000
V A A A²s
CharakteristischeWerte/CharacteristicValues
Durchlassspannung Forwardvoltage
IF = 300 A, VGE = 0 V IF = 300 A, VGE = 0 V
Tvj = 25°C Tvj = 125°C
Rückstromspitze Peakreverserecoverycurrent
IF = 300 A, - diF/dt = 6000 A/µs (Tvj=125°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Sperrverzögerungsladung Recoveredcharge
IF = 300 A, - diF/dt = 6000 A/µs (Tvj=125°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
AbschaltenergieproPuls Reverserecoveryenergy
IF = 300 A, - diF/dt = 6000 A/µs (Tvj=125°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Wärmewiderstand,ChipbisGehäuse Thermalresistance,junctiontocase
proDiode/perdiode
Wärmewiderstand,GehäusebisKühlkörper proDiode/perdiode
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb Temperatureunderswitchingconditions
VF IRM Qr Erec RthJC RthCH Tvj op
min. typ. max.
1,65 2,.