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F3L15MR12W2M1_B69

Infineon

IGBT

F3L15MR12W2M1_B69 EasyPACK™ModulmitCoolSiC™TrenchMOSFETundPressFIT/NTC EasyPACK™modulewithCoolSiC™TrenchMO...


Infineon

F3L15MR12W2M1_B69

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Description
F3L15MR12W2M1_B69 EasyPACK™ModulmitCoolSiC™TrenchMOSFETundPressFIT/NTC EasyPACK™modulewithCoolSiC™TrenchMOSFETandPressFIT/NTC VorläufigeDaten/PreliminaryData J PotentielleAnwendungen AnwendungenmithohenSchaltfrequenzen DC/DCWandler SolarAnwendungen USV-Systeme ElektrischeEigenschaften HoheStromdichte NiederinduktivesDesign NiedrigeSchaltverluste MechanischeEigenschaften IntegrierterNTCTemperaturSensor PressFITVerbindungstechnik Robuste Montage durch integrierte Befestigungsklammern VDSS = 1200V ID nom = 75A / IDRM = 150A PotentialApplications HighFrequencySwitchingapplication DC/DCconverter Solarapplications UPSsystems ElectricalFeatures Highcurrentdensity Lowinductivedesign Lowswitchinglosses MechanicalFeatures IntegratedNTCtemperaturesensor PressFITcontacttechnology Rugged mounting due to integrated mounting clamps ModuleLabelCode BarcodeCode128 DMX-Code ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) Digit 1-5 6-11 12-19 20-21 22-23 Datasheet www.infineon.com PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.0 2019-03-12 F3L15MR12W2M1_B69 MOSFET/MOSFET HöchstzulässigeWerte/MaximumRatedValues Drain-Source-Spannung Drain-sourcevoltage Tvj = 25°C Drain-Gleichstrom DCdraincurrent Tvj = 175°C, VGS = 15 V TH = 35°C Gepu...




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