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DF160R12W2H3F_B11

Infineon

IGBT

DF160R12W2H3F_B11 EasyPACKModulmitschnellemTrench/FeldstoppHigh-Speed3IGBTundSiCDiodeundPressFIT/NTC EasyP...


Infineon

DF160R12W2H3F_B11

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DF160R12W2H3F_B11 EasyPACKModulmitschnellemTrench/FeldstoppHigh-Speed3IGBTundSiCDiodeundPressFIT/NTC EasyPACKmodulewithfastTrench/FieldstopHigh-Speed3IGBTandSiCdiodeandPressFIT/NTC TypischeAnwendungen SolarAnwendungen ElektrischeEigenschaften CoolSiC(TM)SchottkyDiodeGen5 HighSpeedIGBTH3 NiedrigeSchaltverluste thinQHSiCSchottky-Diode1200V MechanischeEigenschaften 3kVAC1minIsolationsfestigkeit Al2O3 Substrat mit kleinem thermischen Widerstand IntegrierterNTCTemperaturSensor KompaktesDesign PressFITVerbindungstechnik J VCES = 1200V IC nom = 160A / ICRM = 320A TypicalApplications Solarapplications ElectricalFeatures CoolSiC(TM)Schottkydiodegen5 HighspeedIGBTH3 Lowswitchinglosses thinQHSiCSchottkydiode1200V MechanicalFeatures 3kVAC1mininsulation Al2O3substratewithlowthermalresistance IntegratedNTCtemperaturesensor Compactdesign PressFITcontacttechnology ModuleLabelCode BarcodeCode128 DMX-Code ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) Digit 1-5 6-11 12-19 20-21 22-23 Datasheet www.infineon.com PleasereadtheImportantNoticeandWarningsattheendofthisdocument V3.0 2017-03-31 DF160R12W2H3F_B11 Bypass-Diode/Bypass-Diode HöchstzulässigeWerte/MaximumRatedValues PeriodischeSpitzensperrspannung Repetitivepeakreverse...




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