Document
FP15R12W1T4P_B11
EasyPIM™ModulmitTrench/FeldstoppIGBT4undEmitterControlled4DiodeundPressFIT/NTC/TIM EasyPIM™modulewithTrench/FieldstopIGBT4andEmitterControlled4diodeandPressFIT/NTC/TIM
VCES = 1200V IC nom = 15A / ICRM = 30A
TypischeAnwendungen • Hilfsumrichter • Klimaanlagen • Motorantriebe
ElektrischeEigenschaften • NiedrigeSchaltverluste • NiedrigesVCEsat • TrenchIGBT4 • VCEsatmitpositivemTemperaturkoeffizienten
MechanischeEigenschaften • Al2O3 Substrat mit kleinem thermischen
Widerstand • KompaktesDesign • PressFITVerbindungstechnik • Robuste Montage durch integrierte
Befestigungsklammern • Thermisches Interface Material bereits
aufgetragen
TypicalApplications • Auxiliaryinverters • Airconditioning • Motordrives
ElectricalFeatures • Lowswitchinglosses • LowVCEsat • TrenchIGBT4 • VCEsatwithpositivetemperaturecoefficient
MechanicalFeatures • Al2O3substratewithlowthermalresistance
• Compactdesign • PressFITcontacttechnology • Rugged mounting due to integrated mounting
clamps • Pre-appliedThermalInterfaceMaterial
ModuleLabelCode
BarcodeCode128
DMX-Code
ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek)
Digit 1-5 6-11 12-19 20-21 22-23
Datasheet www.infineon.com
PleasereadtheImportantNoticeandWarningsattheendofthisdocument
V3.0 2017-05-04
FP15R12W1T4P_B11
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung Collector-emittervoltage
Tvj = 25°C
Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent
TH = 100°C, Tvj max = 175°C
PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent
tP = 1 ms
Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage
VCES IC nom ICRM VGES
1200 15 30
+/-20
V A A V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage
IC = 15 A, VGE = 15 V IC = 15 A, VGE = 15 V IC = 15 A, VGE = 15 V
Tvj = 25°C Tvj = 125°C Tvj = 150°C
Gate-Schwellenspannung Gatethresholdvoltage
IC = 0,48 mA, VCE = VGE, Tvj = 25°C
Gateladung Gatecharge
VGE = -15 V ... +15 V
InternerGatewiderstand Internalgateresistor
Tvj = 25°C
Eingangskapazität Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast Turn-ondelaytime,inductiveload
IC = 15 A, VCE = 600 V VGE = ±15 V RGon = 39 Ω
Tvj = 25°C Tvj = 125°C Tvj = 150°C
Anstiegszeit,induktiveLast Risetime,inductiveload
IC = 15 A, VCE = 600 V VGE = ±15 V RGon = 39 Ω
Tvj = 25°C Tvj = 125°C Tvj = 150°C
Abschaltverzögerungszeit,induktiveLast Turn-offdelaytime,inductiveload
IC = 15 A, VCE = 600 V VGE = ±15 V RGoff = 39 Ω
Tvj = 25°C Tvj = 125°C Tvj = 150°C
Fallzeit,induktiveLast Falltime,inductiveload
IC = 15 A, VCE = 600 V VGE = ±15 V RGoff = 39 Ω
Tvj = 25°C Tvj = 125°C Tvj = 150°C
EinschaltverlustenergieproPuls Turn-onenergylossperpulse
IC = 15 A, VCE = 600 V, LS = 50 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 550 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 39 Ω
Tvj = 150°C
AbschaltverlustenergieproPuls Turn-offenergylossperpulse
IC = 15 A, VCE = 600 V, LS = 50 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 3500 V/µs (Tvj = 150°C)Tvj = 125°C
RGoff = 39 Ω
Tvj = 150°C
Kurzschlußverhalten SCdata
VGE ≤ 15 V, VCC = 800 V VCEmax = VCES -LsCE ·di/dt
tP ≤ 10 µs, Tvj = 150°C
Wärmewiderstand,ChipbisKühlkörper Thermalresistance,junctiontoheatsink
proIGBT/perIGBT validwithIFXpre-appliedthermalinterfacematerial
TemperaturimSchaltbetrieb Temperatureunderswitchingconditions
min. typ. max.
VCE sat
1,85 2,25 V
2,15
V
2,25
V
VGEth 5,20 5,80 6,40 V
QG
0,12
µC
RGint
0,0
Ω
Cies
0,89
nF
Cres
0,03
nF
ICES
1,0 mA
IGES td on
tr td off
tf
Eon Eoff ISC RthJH
100 nA
0,055
µs
0,055
µs
0,055
µs
0,059
µs
0,065
µs
0,065
µs
0,195
µs
0,275
µs
0,28
µs
0,145
µs
0,19
µs
0,215
µs
1,30
mJ
1,75
mJ
1,95
mJ
0,83
mJ
1,20
mJ
1,35
mJ
55
A
1,64 K/W
Tvj op -40
150 °C
Datasheet
2
V3.0
2017-05-04
FP15R12W1T4P_B11
Diode,Wechselrichter/Diode,Inverter
HöchstzulässigeWerte/MaximumRatedValues
PeriodischeSpitzensperrspannung Repetitivepeakreversevoltage
Tvj = 25°C
Dauergleichstrom ContinuousDCforwardcurrent
PeriodischerSpitzenstrom Repetitivepeakforwardcurrent
tP = 1 ms
Grenzlastintegral I²t-value
VR = 0 V, tP = 10 ms, Tvj = 12.