Document
TechnischeInformation/TechnicalInformation
IGBT-Module IGBT-modules
FD200R12PT4_B6
EconoPACK™4ModulmitTrench/FeldstoppIGBT4undEmitterControlledDiodeundNTC EconoPACK™4modulewithtrench/fieldstopIGBT4andEmitterControlledDiodeandNTC
TypischeAnwendungen • 3-Level-Applikationen • AnwendungenmithohenSchaltfrequenzen • Chopper-Anwendungen • Motorantriebe • SolarAnwendungen • USV-Systeme
ElektrischeEigenschaften • ErweiterteSperrschichttemperaturTvjop • TrenchIGBT4 • Tvjop=150°C • VCEsatmitpositivemTemperaturkoeffizienten
MechanischeEigenschaften • 2,5kVAC1minIsolationsfestigkeit • HohemechanischeRobustheit • IntegrierterNTCTemperaturSensor • IsolierteBodenplatte • Standardgehäuse
VCES = 1200V IC nom = 200A / ICRM = 400A
TypicalApplications • 3-Level-Applications • HighFrequencySwitchingApplication • ChopperApplications • MotorDrives • SolarApplications • UPSSystems
ElectricalFeatures • ExtendedOperationTemperatureTvjop • TrenchIGBT4 • Tvjop=150°C • VCEsatwithpositiveTemperatureCoefficient
MechanicalFeatures • 2.5kVAC1minInsulation • Highmechanicalrobustness • IntegratedNTCtemperaturesensor • IsolatedBasePlate • StandardHousing
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:KY approvedby:MK
ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek)
Digit 1-5 6-11 12-19 20-21 22-23
dateofpublication:2013-11-11 revision:3.0
ULapproved(E83335)
1
TechnischeInformation/TechnicalInformation
IGBT-Module IGBT-modules
FD200R12PT4_B6
IGBT,Brems-Chopper/IGBT,Brake-Chopper
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung Collector-emittervoltage
Tvj = 25°C
Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent
TC = 95°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C
PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent
tP = 1 ms
Gesamt-Verlustleistung Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage
VCES
IC nom IC
ICRM
Ptot
VGES
1200 200 300 400
1100
+/-20
V
A A
A
W
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage
IC = 200 A, VGE = 15 V IC = 200 A, VGE = 15 V IC = 200 A, VGE = 15 V
Tvj = 25°C Tvj = 125°C Tvj = 150°C
Gate-Schwellenspannung Gatethresholdvoltage
IC = 3,80 mA, VCE = VGE, Tvj = 25°C
Gateladung Gatecharge
VGE = -15 V ... +15 V
InternerGatewiderstand Internalgateresistor
Tvj = 25°C
Eingangskapazität Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast Turn-ondelaytime,inductiveload
IC = 200 A, VCE = 600 V VGE = ±15 V RGon = 1,0 Ω
Tvj = 25°C Tvj = 125°C Tvj = 150°C
Anstiegszeit,induktiveLast Risetime,inductiveload
IC = 200 A, VCE = 600 V VGE = ±15 V RGon = 1,0 Ω
Tvj = 25°C Tvj = 125°C Tvj = 150°C
Abschaltverzögerungszeit,induktiveLast Turn-offdelaytime,inductiveload
IC = 200 A, VCE = 600 V VGE = ±15 V RGoff = 1,0 Ω
Tvj = 25°C Tvj = 125°C Tvj = 150°C
Fallzeit,induktiveLast Falltime,inductiveload
IC = 200 A, VCE = 600 V VGE = ±15 V RGoff = 1,0 Ω
Tvj = 25°C Tvj = 125°C Tvj = 150°C
EinschaltverlustenergieproPuls Turn-onenergylossperpulse
IC = 200 A, VCE = 600 V, LS = 30 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 4250 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 1,0 Ω
Tvj = 150°C
AbschaltverlustenergieproPuls Turn-offenergylossperpulse
IC = 200 A, VCE = 600 V, LS = 30 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 3550 V/µs (Tvj = 150°C)Tvj = 125°C
RGoff = 1,0 Ω
Tvj = 150°C
Kurzschlußverhalten SCdata
VGE ≤ 15 V, VCC = 600 V VCEmax = VCES -LsCE ·di/dt
tP ≤ 10 µs, Tvj = 150°C
Wärmewiderstand,ChipbisGehäuse Thermalresistance,junctiontocase
proIGBT/perIGBT
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb Temperatureunderswitchingconditions
VCE sat VGEth QG RGint Cies Cres ICES IGES td on
tr
td off
tf
Eon
Eoff ISC RthJC RthCH Tvj op
min. typ. max.
1,75 2,10 V
2,05
V
2,10
V
5,2 5,8 6,4 V
1,65 µC
3,8 Ω
12,5 nF
0,54 nF
0,015 mA
400 nA
0,185
µs
0,20 µs
0,205
µs
0,037
µs
0,044 µs
0,046
µs
0,365
µs
0,455 µs
0,475
µs
0,044
µs
0,072 µs
.