FF600R17KE3_B2

/TechnicalInformation IGBT- IGBT-modules FF600R17KE3_B2 IGBT,/IGBT,Inverter /MaximumRatedValues － Collector-emittervoltage Tvj = 25°C ContinuousDCcollectorcurrent TC = 80°C, Tvj max = 150°C TC = 25°C, Tvj max = 150°C Repetitivepeakcollectorcurrent tP = 1 ms Totalpowerdissipation TC = 25°C, Tvj max = 150°C － Gate-emitterpeakvoltage  PreliminaryData VCES  IC nom IC  ICRM  Ptot  VGES  1700 600 950 1200 4,30 +/-20 V  A A A  kW V /CharacteristicValues － Collector-emittersaturationvoltage Gatethresholdvoltage Gatecharge Internalgateresistor Inputcapacitance Reversetransfercapacitance - Collector-emittercut-offcurrent - Gate-emitterleakagecurrent () Turn-ondelaytime,inductiveload () Risetime,inductiveload () Turn-offdelaytime,inductiveload () Falltime,inductiveload () Turn-onenergylossperpulse (） Turn-offenergylossperpulse SCdata － Thermalresistance,junctiontocase － Thermalresistance,casetoheatsink Temperatureunderswitchingconditions IC = 600 A, VGE = 15 V IC = 600 A, VGE = 15 V IC = 24,0 mA, VCE = VGE, Tvj = 25°C min. typ. max. Tvj = 25°C Tvj = 125°C VCE sat 2,00 2,45 V 2,40 V VGEth 5,2 5,8 6,4 V VGE = -15 V ... +15 V QG  7,00  µC Tvj = 25°C RGint  2,1  Ω f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies  54,0  nF f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres  1,70  nF VCE = 1700 V, VGE = 0 V, Tvj = 25°C ICES   5,0 mA V...