Document
FF600R17ME4P_B11
EconoDUAL™3ModulmitTrench/FeldstoppIGBT4undEmitterControlledDiodeundPressFIT/NTC/TIM EconoDUAL™3modulewithTrench/FieldstopIGBT4andEmitterControlleddiodeandPressFIT/NTC/TIM
TypischeAnwendungen • Hochleistungsumrichter • Windgeneratoren
ElektrischeEigenschaften • HoheStromdichte • NiedrigesVCEsat • Tvjop=150°C • VCEsatmitpositivemTemperaturkoeffizienten
MechanischeEigenschaften • HoheLeistungsdichte • IsolierteBodenplatte • Standardgehäuse • Thermisches Interface Material bereits
aufgetragen
VCES = 1700V IC nom = 600A / ICRM = 1200A
TypicalApplications • Highpowerconverters • Windturbines
ElectricalFeatures • Highcurrentdensity • LowVCEsat • Tvjop=150°C • VCEsatwithpositivetemperaturecoefficient
MechanicalFeatures • Highpowerdensity • Isolatedbaseplate • Standardhousing • Pre-appliedThermalInterfaceMaterial
ModuleLabelCode
BarcodeCode128
DMX-Code
ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek)
Digit 1-5 6-11 12-19 20-21 22-23
Datasheet www.infineon.com
PleasereadtheImportantNoticeandWarningsattheendofthisdocument
V3.0 2017-07-19
FF600R17ME4P_B11
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung Collector-emittervoltage
Tvj = 25°C
Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent
TH = 50°C, Tvj max = 175°C
PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent
tP = 1 ms
Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage
VCES IC nom ICRM VGES
1700 600 1200 +/-20
V A A V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage
IC = 600 A, VGE = 15 V IC = 600 A, VGE = 15 V IC = 600 A, VGE = 15 V
Tvj = 25°C Tvj = 125°C Tvj = 150°C
Gate-Schwellenspannung Gatethresholdvoltage
IC = 24,0 mA, VCE = VGE, Tvj = 25°C
Gateladung Gatecharge
VGE = -15 V ... +15 V
InternerGatewiderstand Internalgateresistor
Tvj = 25°C
Eingangskapazität Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent
VCE = 1700 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast Turn-ondelaytime,inductiveload
IC = 600 A, VCE = 900 V VGE = ±15 V RGon = 1,0 Ω
Tvj = 25°C Tvj = 125°C Tvj = 150°C
Anstiegszeit,induktiveLast Risetime,inductiveload
IC = 600 A, VCE = 900 V VGE = ±15 V RGon = 1,0 Ω
Tvj = 25°C Tvj = 125°C Tvj = 150°C
Abschaltverzögerungszeit,induktiveLast Turn-offdelaytime,inductiveload
IC = 600 A, VCE = 900 V VGE = ±15 V RGoff = 1,0 Ω
Tvj = 25°C Tvj = 125°C Tvj = 150°C
Fallzeit,induk.