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InterFET
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2N4302-3-4
2N4302, 2N4303, 2N4304 N-Channel JFET
Features
• InterFET N0026S Geometry • Low Noise: 4 nV/√Hz Typical • Low Leakage: 10pA Typical • RoHS Compliant • SMT, TH, and Bare Die Package options.
Applications
• VHS Amplifiers • Small Signal Amplifiers • Oscillators • Mixers
Description
The -30V InterFET 2N4302, 2N4303, and 2N4304 are targeted for small signal amplifiers, mixers and oscillators. Gate leakages are typically less than 10pA at room temperatures.
Source 1 Drain 2
SOT23 Top View 3 Gate
Gate 3 Drain 2 Source 1
TO-92 Bottom View
Product Summary
Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage GFS Forward Transconductance
2N4302 Min -30 0.5
-4 (Max) 1
2N4303 Min -30 4
-6 (Max) 2
Ordering Information Custom Part and Binning Options Available
Part Number
Description
2N4302; 2N4303; 2N4304
Through-Hole
SMP4302; SMP4303; SMP4304
Surface Mount
7“ Tape and Reel: Max 3,000 Pieces
SMP4302TR; SMP4303TR; SMP4304TR 13” Tape and Reel: Max 9,000 Pieces
Chip Orientated Tray
2N4302COT; 2N4303COT; 2N4304COT (COT Waffle Pack)
Chip Face-up Tray
2N4302CFT; 2N4303CFT; 2N4304CFT
(CFT Waffle Pack)
Case TO-92 SOT23
SOT23
COT
CFT
2N4304 Min
Unit
-30
V
0.5
mA
-10 (Max)
V
1
mS
Packaging Bulk Bulk
Minimum 1,000 Pieces Tape and Reel
400/Waffle Pack
400/Waffle Pack
Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice.
IF35094.R00
InterFET
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2N4302-3-4
Electrical Characteristics
Maximum Ratings (@ TA = 25°C, Unless otherwise specified)
Parameters VRGS Reverse Gate Source and Gate Drain Voltage IFG Continuous Forward Gate Current PD Continuous Device Power Dissipation P Power Derating TJ Operating Junction Temperature TSTG Storage Temperature
Value -30 10 300 2
-55 to 125 -65 to 150
Unit V mA
mW mW/°C
°C °C
Static Characteristics (@ TA = 25°C, Unless otherwise specified)
V(BR)GSS IGSS VGS(OFF) IDSS
Parameters Gate to Source Breakdown Voltage Gate to Source Reverse Current Gate to Source Cutoff Voltage Drain to Source Saturation Current
Conditions VDS = 0V, IG = -1μA
VGS = -15V, VDS = 0V
VDS = 20V, ID = 10nA VDS = 20V, VGS = 0V
(Pulsed)
2N4302
2N4303
2N4304
Min Max Min Max Min Max Unit
-30
-30
-30
V
-1
-1
-1 nA
-4
-6
-10 V
0.5 5 4 10 0.5 15 mA
Dynamic Characteristics (@ TA = 25°C, Unless otherwise specified)
2N4302
2N4303
2N4304
Parameters
Conditions
Min Max Min Max Min Max Unit
GFS
Forward Transconductance
VDS = 20V, VGS = 0V, f = 1kHz
1
2
1
mS
Ciss
Input Capacitance
VDS = 20V, VGS = 0V, f = 1MHz
6
6
6 .