IF3601

InterFET Product Folder Technical Support Order Now IF3601 IF3601 N-Channel JFET Features InterFET N3600L Geometry Ultra Low Noise: 0.5 nV/√Hz Typical High Gain: 750mS Typical Low Rds(on): 2.0 Ohms Typical RoHS Compliant SMT, TH, and Bare Die Package options. Applications Low-Noise, High Gain Amplifiers Description The -20V InterFET IF3601 JFET is targeted for ultra low noise high gain amplifier designs. The IF3601 has a cutoff voltage of less than 2.0V ideal for low voltage applications. The TO-39 package is hermetically sealed and suitable for military applications. Gate/Case Drain 2 Source TO-39 Bottom View 3 1 Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage GFS Forward Transconductance Ordering Information Custom Part and Binning Options Available Part Number Description IF3601T39 Through-Hole IF3601COT Chip Orientated Tray (COT Waffle Pack) IF3601CFT Chip Face-up Tray (CFT Waffle Pack) IFN3601 Min Unit -20 V 30 mA -0.35 V 750 Typical mS Case TO-39 COT CFT Packaging Bulk 100/Waffle Pack 100/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources ...