IFN113

InterFET Product Folder Technical Support Order Now IFN113 IFN113 N-Channel JFET Features InterFET N0132S Geometry Low Noise: 1.2 nV/√Hz Typical High Gain: 15mS Typical RoHS Compliant SMT, TH, and Bare Die Package options. Applications Low-Noise, High Gain Replacement for Japanese 2SK113 Description The -50V InterFET IFN113 is a low noise high gain replacement for the Japanese 2SK113 JFET. Gate leakages are typically less than 50pA at room temperatures. The TO-18 package is hermetically sealed and suitable for military applications. Gate/Case Drain 2 Source TO-18 Bottom View 3 1 Source 1 Drain 2 SOT23 Top View 3 Gate TO-92 Bottom View Gate 3 Drain 2 Source 1 Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage GFS Forward Transconductance Ordering Information Custom Part and Binning Options Available Part Number Description IFN113 Through-Hole PN113 Through-Hole SMP113 Surface Mount 7“ Tape and Reel: Max 3,000 Pieces SMP113TR 13” Tape and Reel: Max 9,000 Pieces IFN113COT Chip Orientated Tray (COT Waffle Pack) IFN113CFT Chip Face-up Tray (CFT Waffle Pack) IFN113 Min Unit -50 V 5 mA -0.3 V 5 mS Case TO-18 TO-92 SOT23 SOT23 COT CFT Packaging Bulk Bulk Bulk Minimum 1,000 Pieces Tape and Reel 400/Waffle Pack 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application un...