N0450S

InterFET Product Folder Technical Support Order Now N0450S N0450S Process Geometry Features Low Noise: 1.0 nV/√Hz Typical Typical Input Capacitance: 28pF Typical Breakdown Voltage: -45V High Input Impedance Small Die: 670um X 670um X 203um Bond Pads: 90um X 90um Substrate Connected to Gate Au Back-Side Finish Applications Low-Current Low Gate Leakage Current Low Rds(on) Switch Low Noise Amplifier Audio Amplifiers Mid to High-Gain Applications Matched Pair Applications Custom Part Options Description The InterFET N0450S Geometry is ideal for low noise high gain applications. Geometry Top View 450 G S-D G Standard Parts IFN363 IFN146 J108, J109, J110A S-D Test Pattern Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage GFS Forward Transconductance Min Typ Max Unit -30 -45 V 5 600 mA -0.5 -10 V 90 mS Maximum Ratings (@ TA = 25°C, Unless otherwise specified) Parameters Min Typ Max Unit VRGS Reverse Gate to Source or Drain Voltage -30 -45 V IFG Continuous Forward Gate Current 10 mA TJ Operating Junction Temperature -55 150 °C TSTG Storage Temperature -65 175 °C Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and al...