N3600L

InterFET Product Folder Technical Support Order Now N3600L N3600L Process Geometry Features Low Noise: 0.5 nV/√Hz Typical Typical Breakdown Voltage: -22V Low On Resistance: 2.0Ω Typical Die Size: 1838um X 1838um X 203um Oversized Bond Pads Substrate Connected to Gate Au Back-Side Finish Applications Large Capacitance Detector Pre-Amplifier Matched Pair Applications Custom Part Options Description The InterFET N3600L Geometry is ideal for low noise high gain applications. Geometry Top View S-D S-D S-D G 3600 G D-S D-S D-S Standard Parts IF3601 IF3602 Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage GFS Forward Transconductance Min Typ Max Unit -15 -22 V 50 1000 mA -0.5 -3 V 750 mS Maximum Ratings (@ TA = 25°C, Unless otherwise specified) Parameters Min Typ Max Unit VRGS Reverse Gate to Source or Drain Voltage -15 -22 V IFG Continuous Forward Gate Current 10 mA TJ Operating Junction Temperature -55 150 °C TSTG Storage Temperature -65 175 °C Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF355...