U235

8/2014 B87 U231, U232, U233, U234, U235 N-Channel Matched Dual Silicon Junction Field-Effect Transistor · Differential Amplifier Absolute maximum ratings at TA = 25oC Reverse Gate Source & Gate Drain Voltage -50V · Low & Maximum Frequency Amplifier Continuous Forward Gate Current 50 mA Continuous Device Power Dissipation 300 mW Power Derating 4.3 mW/oC Operating Temperature Range Storage Temperature Range -55°C to +125°C -65oC to +150oC At 25oC free air temperature Static Electrical Characteristics Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage Gate Source On Voltage Drain Saturation Current (pulsed) Gate Current VGS(OFF) VGS IDSS IG Dynamic Electrical Characteristics Common-Source Forward Transconductance gfs Common-Source Output Transconductance gos Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Equivalent Short Circuit Input Noise Voltage ~eN U231, U232, U233, U234, U235 Min Typ Max Unit -50 V -100 pA -500 nA -0.5 -4.5 V -0.3 -4 V 0.5 5 mA -50 pA -250 nA 0.6 1.6 mS 10 uS 6 pF 2 pF 80 nV/√Hz Process NJ16 Test Conditions IG = -1 uA, VDS = 0 V VGS = -30 V, VDS = 0 V VDS = 20 V, ID = 1 nA VDG = 20 V, ID = 200 uA VDS = 20 V, VGS = 0 V 150°C VDG = 20 V, ID = 200 uA 125°C VDG = 20 V, ID = 200 uA 1 kHz VDG = 20 V, ID = 200 uA 1 kHz VDS = 20V, VGS = 0 V 1 MHz VDS = 20 V, VGS = 0 V 1 MHz VDS = 20 V, VGS = 0 V 100 Hz Matching Cha...