IFN5912

InterFET Product Folder Technical Support Order Now IFN5911-2 IFN5911, IFN5912 Dual Matched N-Channel JFET Features InterFET N0030L Geometry Low Noise: 4.0 nV/√Hz Typical Low Leakage: 10pA Typical Low Input Capacitance: 5.0 pF Typical RoHS Compliant SMT, TH, and Bare Die Package options. Applications VHF Amplifiers Wideband Differential Amplifiers Description The -25V InterFET IFN5911 and IFN 5912 JFET’s are targeted for wideband differential amplifiers. Gate leakages are less than 10pA at room temperatures. The TO-78 package is hermetically sealed and suitable for military applications. Custom specifications, matching, and packaging options are available. Source 5 Case Gate 3 Drain 2 1 Source TO-78 Bottom View 6 Drain 7 Gate SOIC8 Top View Gate 1 Drain 2 Source 3 Gate 4 8 Gate 7 Source 6 Drain 5 Gate Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage GFS Forward Transconductance IFN5911 Min -25 7 -1 3000 IFN5912 Min Unit -25 V 7 mA -1 V 3000 μS Ordering Information Custom Part and Binning Options Available Part Number Description Case IFN5911; IFN5912 Through-Hole TO-78 SMP5911; SMP5912 Surface Mount SOIC8 SMP5911; SMP5912 7“ Tape and Reel: Max 500 Pieces 13” Tape and Reel: Max 2,500 Pieces SOIC8 IFN5911COT; IFN5912COT * Chip Orientated Tray (COT Waffle Pack) COT IFN5911CFT; IFN5912CFT * Chip Face-up Tray (CFT Waffle Pack) CF...