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IFNU257 Dataheets PDF



Part Number IFNU257
Manufacturers InterFET
Logo InterFET
Description Dual Matched N-Channel JFET
Datasheet IFNU257 DatasheetIFNU257 Datasheet (PDF)

InterFET Product Folder Technical Support Order Now IFNU257 IFNU257 Dual Matched N-Channel JFET Features • InterFET N0030L Geometry • Low Leakage: 4.0pA Typical • Low Input Capacitance: 5.0pF Typical • Replacement for U257 • RoHS Compliant • SMT, TH, and Bare Die Package options. Applications • Wideband Differential Amplifiers • Audio Amplifiers Description The -25V InterFET IFN257 JFET is targeted for wideband differential amplifier applications. Gate leakages are typically less than 4pA .

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InterFET Product Folder Technical Support Order Now IFNU257 IFNU257 Dual Matched N-Channel JFET Features • InterFET N0030L Geometry • Low Leakage: 4.0pA Typical • Low Input Capacitance: 5.0pF Typical • Replacement for U257 • RoHS Compliant • SMT, TH, and Bare Die Package options. Applications • Wideband Differential Amplifiers • Audio Amplifiers Description The -25V InterFET IFN257 JFET is targeted for wideband differential amplifier applications. Gate leakages are typically less than 4pA at room temperatures. The TO-78 package is hermetically sealed and suitable for military applications. Custom specifications, matching, and packaging options are available. Source 5 Case Gate 3 Drain 2 1 Source TO-78 Bottom View 6 Drain 7 Gate Gate 1 Drain 2 Source 3 Gate 4 SOIC8 Top View 8 Gate 7 Source 6 Drain 5 Gate Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage GFS Forward Transconductance IFNU235 Min -25 5 -1 4.5 Ordering Information Custom Part and Binning Options Available Part Number Description IFNU257 Through-Hole SMPU257 Surface Mount 7“ Tape and Reel: Max 500 Pieces SMPU257TR 13” Tape and Reel: Max 2,500 Pieces IFNU257COT * Chip Orientated Tray (COT Waffle Pack) IFNU257CFT * Chip Face-up Tray (CFT Waffle Pack) * Bare die packaged options are designed for matched specifications but not 100% tested Case TO-78 SOIC8 SOIC8 COT CFT Unit V mA V mS Packaging Bulk Bulk Minimum 500 Pieces Tape and Reel 70/Waffle Pack 70/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35104.R00 InterFET Product Folder Technical Support Electrical Characteristics Maximum Ratings (@ TA = 25°C, Unless otherwise specified) Parameters VRGS Reverse Gate Source and Gate Drain Voltage IFG Continuous Forward Gate Current PD Continuous Device Power Dissipation P Power Derating TJ Operating Junction Temperature TSTG Storage Temperature Static Characteristics (@ TA = 25°C, Unless otherwise specified) V(BR)GSS IGSS VGS(OFF) IDSS Parameters Gate to Source Breakdown Voltage Gate to Source Reverse Current Gate to Source Cutoff Voltage Drain to Source Saturation Current Conditions VDS = 0V, IG = -1μA VGS = -15V, VDS = 0V, TA = 25°C VGS = -15V, VDS = 0V, TA = 150°C VDS = 10V, ID = 1nA VDS = 10V, VGS = 0V (Pulsed) Dynamic Characteristics (@ TA = 25°C, Unless otherwise specified) Parameters GFS Forward Transconductance GOS Output Conductance Ciss Input Capacitance Crss Reverse Transfer Capacitance en Equivalent Circuit Input Noise Voltage Differential Gate VGS1 − VGS2 Source Voltage GOS1 − GOS2 Differential Output Conductan.


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