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IFNU257
IFNU257 Dual Matched N-Channel JFET
Features
• InterFET N0030L Geometry • Low Leakage: 4.0pA Typical • Low Input Capacitance: 5.0pF Typical • Replacement for U257 • RoHS Compliant • SMT, TH, and Bare Die Package options.
Applications
• Wideband Differential Amplifiers • Audio Amplifiers
Description
The -25V InterFET IFN257 JFET is targeted for wideband differential amplifier applications. Gate leakages are typically less than 4pA at room temperatures. The TO-78 package is hermetically sealed and suitable for military applications. Custom specifications, matching, and packaging options are available.
Source 5
Case
Gate 3
Drain 2 1
Source
TO-78 Bottom View
6 Drain 7 Gate
Gate 1 Drain 2 Source 3 Gate 4
SOIC8 Top View
8 Gate 7 Source 6 Drain 5 Gate
Product Summary
Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage GFS Forward Transconductance
IFNU235 Min -25 5 -1 4.5
Ordering Information Custom Part and Binning Options Available
Part Number
Description
IFNU257
Through-Hole
SMPU257
Surface Mount
7“ Tape and Reel: Max 500 Pieces
SMPU257TR
13” Tape and Reel: Max 2,500 Pieces
IFNU257COT *
Chip Orientated Tray (COT Waffle Pack)
IFNU257CFT *
Chip Face-up Tray (CFT Waffle Pack)
* Bare die packaged options are designed for matched specifications but not 100% tested
Case TO-78 SOIC8
SOIC8 COT CFT
Unit V mA V mS
Packaging Bulk Bulk
Minimum 500 Pieces Tape and Reel 70/Waffle Pack 70/Waffle Pack
Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice.
IF35104.R00
InterFET
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Electrical Characteristics
Maximum Ratings (@ TA = 25°C, Unless otherwise specified)
Parameters VRGS Reverse Gate Source and Gate Drain Voltage IFG Continuous Forward Gate Current PD Continuous Device Power Dissipation P Power Derating TJ Operating Junction Temperature TSTG Storage Temperature
Static Characteristics (@ TA = 25°C, Unless otherwise specified)
V(BR)GSS IGSS VGS(OFF) IDSS
Parameters Gate to Source Breakdown Voltage Gate to Source Reverse Current Gate to Source Cutoff Voltage Drain to Source Saturation Current
Conditions
VDS = 0V, IG = -1μA
VGS = -15V, VDS = 0V, TA = 25°C VGS = -15V, VDS = 0V, TA = 150°C
VDS = 10V, ID = 1nA
VDS = 10V, VGS = 0V (Pulsed)
Dynamic Characteristics (@ TA = 25°C, Unless otherwise specified)
Parameters
GFS
Forward Transconductance
GOS
Output Conductance
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
en
Equivalent Circuit Input Noise Voltage
Differential Gate VGS1 − VGS2 Source Voltage
GOS1 − GOS2
Differential Output Conductan.