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DTD143ECHZG Dataheets PDF



Part Number DTD143ECHZG
Manufacturers ROHM
Logo ROHM
Description Digital transistor
Datasheet DTD143ECHZG DatasheetDTD143ECHZG Datasheet (PDF)

DTD143EC HZG 500mA/50V Digital transistor (with built-in resistors) Datasheet AEC-Q101 Qualified Parameter Value lOutline SOT-23   VCC 50V IC 500mA     R1 4.7kΩ R2 4.7kΩ     (SST3)                  lFeatures lInner circuit 1) Built-in bias resistors enable the configuration   of an invertercircuit without connecting   external input resistors(see equivalent circuit) 2) The bias resistors consist of thin-film resistors   with complete isolation to allow negative   biasin.

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DTD143EC HZG 500mA/50V Digital transistor (with built-in resistors) Datasheet AEC-Q101 Qualified Parameter Value lOutline SOT-23   VCC 50V IC 500mA     R1 4.7kΩ R2 4.7kΩ     (SST3)                  lFeatures lInner circuit 1) Built-in bias resistors enable the configuration   of an invertercircuit without connecting   external input resistors(see equivalent circuit) 2) The bias resistors consist of thin-film resistors   with complete isolation to allow negative   biasing of the input.They also have the advantage   of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for   operation, making the device desigh easy. lApplication INVERTER, INTERFACE, DRIVER lPackaging specifications Part No. Package DTD143EC HZG SOT-23 (SST3) Package size 2924                        Taping code Reel size Tape width (mm) (mm) Basic ordering unit.(pcs) Marking T116 180 8 3000 R23                                                                                          www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/5 20160613 - Rev.001 DTD143EC HZG   lAbsolute maximum ratings (Ta = 25°C) Parameter Supply voltage Input voltage Collector current Power dissipation Junction temperature Range of storage temperature                 Datasheet Symbol Values Unit VCC 50 V VIN -10 to 30 V IC*1 500 mA PD*2 200 mW Tj 150 ℃ Tstg -55 to +150 ℃ lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Input voltage Output voltage Input current Output current DC current gain Input resistance Resistance ratio VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 VCC = 5V, IO = 100μA VO = 0.3V, IO = 20mA IO = 50mA, II = 2.5mA VI = 5V VCC = 50V, VI = 0V VO = 5V, IO = 50mA - Values Unit Min. Typ. Max. - - 0.5 V 3.0 - - - 100 300 mV - - 1.8 mA - - 500 nA 47 - - - 3.29 4.7 6.11 kΩ 0.8 1.0 1.2 - Transition frequency f *1 T VCE = 10V, IE = -50mA, f = 100MHz - 200 - MHz *1 Characteristics of built-in transistor. *2 Each terminal mounted on a reference land.                                                www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 2/5                                          20160613 - Rev.001 DTD143EC HZG     lElectrical characteristic curves (Ta =25°C)          Datasheet Fig.1 Input Voltage vs. Output Current     (ON Characteristics) Fig.2 Output Current vs. Input Voltage     (OFF Characteristics) Fig.3 Output Current vs. Output Voltage Fig.4 DC Current Gain vs. Output Current                                                                                            www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 3/5 20160613 - Rev.001 DTD143EC HZG     lElectrical characteristic curves (Ta =25°C) Fig.5 Output Voltage vs. Output Current          Datasheet                                                                                            www.rohm.com © 2016 ROHM Co.


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