Low capacitance ESD Protection Diode
Data Sheet
Low capacitance ESD Protection Diode
UDZU5.6B
lApplications ESD Protection
lFeatures 1)Small mold type. (UM...
Description
Data Sheet
Low capacitance ESD Protection Diode
UDZU5.6B
lApplications ESD Protection
lFeatures 1)Small mold type. (UMD2)
lDimensions (Unit : mm)
1.25±0.1
0.1±0.1 0.05
1.7±0.1 2.5±0.2
0.8MIN. 2.1
for lLand size figure (Unit : mm) 0.9MIN.
2)Low Capacitance 3)By chip-mouter,automatic mouting is possible.
d lConstruction endens Silicon epitaxial planer
0.3±0.05
ROHM : UMD2 JEDEC : SOD-323 JEITA : SC-901A
dot (year week factory)
0.7±0.2 0.1
lTaping dimensions (Unit : mm)
UMD2 lStructure
RecoemwmDesig lAbsolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
t Power dissipation
P
200
mW
N Junction temperature
Tj
150
C
o Storage temperature
Tstg
-55 to +150
C
NOperation temperature
Topr
-55 to +150
C
lElectrical characteristics (Ta=25C)
Parameter
Symbol Min.
Typ.
Max.
Unit
Conditions
Zener voltage
VZ
5.49
-
5.73
V
IZ=5mA
Reverse current
IR
-
-
1.0
μA
VR=2.5V
Capacitance between terminals
Ct
-
8.0
-
pF
f=1MHz,VR=0V
*Zener voltage(Vz) shall be measured at 40ms after loading current.
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1/3
2011.11 - Rev.A
UDZU5.6B
Data Sheet
10
10000
Ta=25°C
1000
Ta=125°C
Ta=150°C
REVERSE CURRENT:IR(pA)
ZENER CURRENT:Iz(mA)
1
Ta=125°C
100
Ta=-25°C
Ta=75°C
10 0.1
1
for Ta=75°C
Ta=25°C
0.01 5
ed 100
5.5
6
6.5
ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS
f=1MHz
end ns 10
ZENER VOLTAGE:Vz(V)
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
m sig 1
0
...
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