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FF23MR12W1M1_B11

Infineon

MOSFET

FF23MR12W1M1_B11 EasyDUALModulmitCoolSiC™TrenchMOSFETundPressFIT/NTC EasyDUALmodulewithCoolSiC™TrenchMOSFE...


Infineon

FF23MR12W1M1_B11

File Download Download FF23MR12W1M1_B11 Datasheet


Description
FF23MR12W1M1_B11 EasyDUALModulmitCoolSiC™TrenchMOSFETundPressFIT/NTC EasyDUALmodulewithCoolSiC™TrenchMOSFETandPressFIT/NTC VorläufigeDaten/PreliminaryData - PotentielleAnwendungen AnwendungenmithohenSchaltfrequenzen DC/DCWandler SolarAnwendungen USV-Systeme ElektrischeEigenschaften HoheStromdichte NiederinduktivesDesign NiedrigeSchaltverluste MechanischeEigenschaften IntegrierterNTCTemperaturSensor PressFITVerbindungstechnik Robuste Montage durch integrierte Befestigungsklammern VDSS = 1200V ID nom = 50A / IDRM = 100A PotentialApplications HighFrequencySwitchingapplication DC/DCconverter Solarapplications UPSsystems ElectricalFeatures Highcurrentdensity Lowinductivedesign Lowswitchinglosses MechanicalFeatures IntegratedNTCtemperaturesensor PressFITcontacttechnology Rugged mounting due to integrated mounting clamps ModuleLabelCode BarcodeCode128 DMX-Code ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) Digit 1-5 6-11 12-19 20-21 22-23 Datasheet www.infineon.com PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.2 2018-07-02 FF23MR12W1M1_B11 MOSFET/MOSFET HöchstzulässigeWerte/MaximumRatedValues Drain-Source-Spannung Drain-sourcevoltage Tvj = 25°C Drain-Gleichstrom DCdraincurrent Tvj = 175°C, VGS = 15 V TH = 75°C Gepulst...




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