MOSFET
FF23MR12W1M1_B11
EasyDUALModulmitCoolSiC™TrenchMOSFETundPressFIT/NTC EasyDUALmodulewithCoolSiC™TrenchMOSFE...
Description
FF23MR12W1M1_B11
EasyDUALModulmitCoolSiC™TrenchMOSFETundPressFIT/NTC EasyDUALmodulewithCoolSiC™TrenchMOSFETandPressFIT/NTC VorläufigeDaten/PreliminaryData
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PotentielleAnwendungen AnwendungenmithohenSchaltfrequenzen DC/DCWandler SolarAnwendungen USV-Systeme
ElektrischeEigenschaften HoheStromdichte NiederinduktivesDesign NiedrigeSchaltverluste
MechanischeEigenschaften IntegrierterNTCTemperaturSensor PressFITVerbindungstechnik Robuste Montage durch integrierte
Befestigungsklammern
VDSS = 1200V ID nom = 50A / IDRM = 100A
PotentialApplications HighFrequencySwitchingapplication DC/DCconverter Solarapplications UPSsystems
ElectricalFeatures Highcurrentdensity Lowinductivedesign Lowswitchinglosses
MechanicalFeatures IntegratedNTCtemperaturesensor PressFITcontacttechnology Rugged mounting due to integrated mounting
clamps
ModuleLabelCode
BarcodeCode128
DMX-Code
ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek)
Digit 1-5 6-11 12-19 20-21 22-23
Datasheet www.infineon.com
PleasereadtheImportantNoticeandWarningsattheendofthisdocument
V2.2 2018-07-02
FF23MR12W1M1_B11
MOSFET/MOSFET
HöchstzulässigeWerte/MaximumRatedValues
Drain-Source-Spannung Drain-sourcevoltage
Tvj = 25°C
Drain-Gleichstrom DCdraincurrent
Tvj = 175°C, VGS = 15 V
TH = 75°C
Gepulst...
Similar Datasheet
- FF23MR12W1M1_B11 MOSFET - Infineon