Document
SiC
Silicon Carbide Diode
5th Generation thinQ!TM
650V SiC Schottky Diode
IDH06G65C5
Final Datasheet
Rev. 2.2, 2012-12-10
Power Management & Multimarket
5th Generation thinQ!™ SiC Schottky Diode
1
Description
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
Schottky Barrier diodes. The Infineon proprietary diffusion soldering process,
already introduced with G3 is now combined with a new, more compact design and
thin-wafer technology. The result is a new family of products showing improved
efficiency over all load conditions, resulting from both the improved thermal
characteristics and a lower figure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has been designed to complement our 650V
CoolMOS™ families: this ensures meeting the most stringent application
requirements in this voltage range.
Features
Revolutionary semiconductor material - Silicon Carbide Benchmark switching behavior No reverse recovery/ No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applications Breakdown voltage tested at 14 mA2) Optimized for high temperature operation
Benefits
System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Enabling higher frequency / increased power density solutions Higher system reliability due to lower operating temperatures Reduced EMI
Applications
Switch mode power supply Power factor correction Solar inverter Uninterruptible power supply
Table 1
Key Performance Parameters
Parameter
Value
Unit
VDC
650
V
QC; VR=400V
10
nC
EC; VR=400V
2.1
µJ
IF @ TC < 145°C 6
A
Table 2
Pin 1 C
Pin Definition
Pin 2
Pin 3
A
n.a.
IDH06G65C5
1 2
Type / ordering Code IDH06G65C5
Package PG-TO220-2
Marking D0665C5
Related links www.infineon.com/sic
1) J-STD20 and JESD22 2) All devices tested under avalanche conditions for a time periode of 10ms
Final Data Sheet
2
Rev. 2.2, 2012-12-10
5th Generation thinQ!TM SiC Schottky Diode IDH06G65C5
Table of contents
Table of Contents
1
Description .......................................................................................................................................... 2
2
Maximum ratings................................................................................................................................4
3
Thermal characteristics.....................................................................................................................4
4
Electrical characteristics...................................................................................................................5
5
Electrical characteristics diagrams..................................................................................................6
6
Simplified Forward Characteristics Model ......................................................................................8
7
Package outlines................................................................................................................................9
8
Revision History...............................................................................................................................10
Final Data Sheet
3
Rev. 2.2, 2012-12-10
5th Generation thinQ!TM SiC Schottky Diode IDH06G65C5
Maximum ratings
2
Maximum ratings
Table 3 Parameter
Maximum ratings Symbol
Continuous forward current
IF
Surge non-repetitive forward current, IF,SM sine halfwave
Non-repetitive peak forward current IF,max
i²t value
∫ i²dt
Repetitive peak reverse voltage Diode dv/dt ruggedness Power dissipation Operating and storage temperature Mounting torque
VRRM dv/dt Ptot Tj;Tstg
Min. – – – – – – – – – -55 –
Values
Typ. – – – – – – – – – – –
Max. 6 54 48
291 14 11 650 100 62 175 70
Unit Note/Test Condition
A
A²s
V V/ns W °C Ncm
TC < 145°C, D=1 TC = 25°C, tp=10 ms TC = 150°C, tp=10 ms TC = 25°C, tp=10 µs TC = 25°C, tp=10 ms TC = 150°C, tp=10 ms Tj = 25°C VR=0..480 V TC = 25°C
M3 screws
3
Thermal characteristics
Table 4
Thermal characteristics TO-220-2
Parameter
Symbol
Min.
Thermal resistance, junction-case RthJC
–
Thermal resistance, junctionambient
RthJA
–
Soldering temperature,
Tsold
wavesoldering only allowed at leads
–
Values Typ. 1.5 –
–
Max. 2.4 62
260
Unit Note/Test Condition
K/W leaded
°C
1.6mm (0.063 in.) from case for 10 s
Final Data Sheet
4
Rev. 2.2, 2012-12-10
5th Generation thinQ!TM SiC Schottky Diode IDH06G65C5
Electrical characteristics
4
Electrical characteristics
Table 5 Parameter
Static characteristics Symbol
DC blocking voltage
VDC
Diode forward voltage
VF
Reverse current
IR
Min. 650
– – – – –
Values
Typ. – 1.5 1.8 0.3
0.08 1.2
Max. – 1.7 2.1
110.