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IDH06G65C5 Dataheets PDF



Part Number IDH06G65C5
Manufacturers Infineon
Logo Infineon
Description Silicon Carbide Diode
Datasheet IDH06G65C5 DatasheetIDH06G65C5 Datasheet (PDF)

SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDH06G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ!™ SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family.

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SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDH06G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ!™ SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range. Features  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse recovery/ No forward recovery  Temperature independent switching behavior  High surge current capability  Pb-free lead plating; RoHS compliant  Qualified according to JEDEC1) for target applications  Breakdown voltage tested at 14 mA2)  Optimized for high temperature operation Benefits  System efficiency improvement over Si diodes  System cost / size savings due to reduced cooling requirements  Enabling higher frequency / increased power density solutions  Higher system reliability due to lower operating temperatures  Reduced EMI Applications  Switch mode power supply  Power factor correction  Solar inverter  Uninterruptible power supply Table 1 Key Performance Parameters Parameter Value Unit VDC 650 V QC; VR=400V 10 nC EC; VR=400V 2.1 µJ IF @ TC < 145°C 6 A Table 2 Pin 1 C Pin Definition Pin 2 Pin 3 A n.a. IDH06G65C5 1 2 Type / ordering Code IDH06G65C5 Package PG-TO220-2 Marking D0665C5 Related links www.infineon.com/sic 1) J-STD20 and JESD22 2) All devices tested under avalanche conditions for a time periode of 10ms Final Data Sheet 2 Rev. 2.2, 2012-12-10 5th Generation thinQ!TM SiC Schottky Diode IDH06G65C5 Table of contents Table of Contents 1 Description .......................................................................................................................................... 2 2 Maximum ratings................................................................................................................................4 3 Thermal characteristics.....................................................................................................................4 4 Electrical characteristics...................................................................................................................5 5 Electrical characteristics diagrams..................................................................................................6 6 Simplified Forward Characteristics Model ......................................................................................8 7 Package outlines................................................................................................................................9 8 Revision History...............................................................................................................................10 Final Data Sheet 3 Rev. 2.2, 2012-12-10 5th Generation thinQ!TM SiC Schottky Diode IDH06G65C5 Maximum ratings 2 Maximum ratings Table 3 Parameter Maximum ratings Symbol Continuous forward current IF Surge non-repetitive forward current, IF,SM sine halfwave Non-repetitive peak forward current IF,max i²t value ∫ i²dt Repetitive peak reverse voltage Diode dv/dt ruggedness Power dissipation Operating and storage temperature Mounting torque VRRM dv/dt Ptot Tj;Tstg Min. – – – – – – – – – -55 – Values Typ. – – – – – – – – – – – Max. 6 54 48 291 14 11 650 100 62 175 70 Unit Note/Test Condition A A²s V V/ns W °C Ncm TC < 145°C, D=1 TC = 25°C, tp=10 ms TC = 150°C, tp=10 ms TC = 25°C, tp=10 µs TC = 25°C, tp=10 ms TC = 150°C, tp=10 ms Tj = 25°C VR=0..480 V TC = 25°C M3 screws 3 Thermal characteristics Table 4 Thermal characteristics TO-220-2 Parameter Symbol Min. Thermal resistance, junction-case RthJC – Thermal resistance, junctionambient RthJA – Soldering temperature, Tsold wavesoldering only allowed at leads – Values Typ. 1.5 – – Max. 2.4 62 260 Unit Note/Test Condition K/W leaded °C 1.6mm (0.063 in.) from case for 10 s Final Data Sheet 4 Rev. 2.2, 2012-12-10 5th Generation thinQ!TM SiC Schottky Diode IDH06G65C5 Electrical characteristics 4 Electrical characteristics Table 5 Parameter Static characteristics Symbol DC blocking voltage VDC Diode forward voltage VF Reverse current IR Min. 650 – – – – – Values Typ. – 1.5 1.8 0.3 0.08 1.2 Max. – 1.7 2.1 110.


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