IDH20G65C6
6th Generation CoolSiC™
650V SiC Schottky Diode
The CoolSiC™ generation 6 (G6) is the leading edge technolog...
IDH20G65C6
6th Generation CoolSiC™
650V SiC
Schottky Diode
The CoolSiC™ generation 6 (G6) is the leading edge technology from Infineon for the SiC
Schottky barrier diodes. The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further advancements like a novel
Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a lower figure of merit (Qc x VF). The CoolSiC™
Schottky diode 650 V G6 has been designed to complement our 600 V and 650 V CoolMOS™ 7 families, meeting the most stringent application requirements in this voltage range.
Table 1 Key performance parameters
Parameter
Value
Unit
VRRM
650
V
QC (VR = 400 V)
26.8
nC
EC (VR = 400 V)
5.3
µJ
IF (TC ≤ 135 °C, D = 1)
20
A
VF (IF = 20 A, Tj = 25 °C) 1.25
V
PG-TO220-2
CASE
1) Cathode
1
2) Anode
2
Table 2 Package information
Type / ordering Code Package
IDH20G65C6
PG-TO220-2
Marking D2065C6
Features
Best in class forward voltage (1.25 V) Best in class figure of merit (Qc x VF) High dv/dt ruggedness (150 V/ns)
Benefits
System efficiency improvement System cost and size savings due to the reduced cooling requirements Enabling higher frequency and increased power density
Potential Applications
Power factor correction in SMPS Solar inverter Uninterruptible power supply
Product Validation
Qualified for industrial applications according to the relevant tests of JEDEC (J-STD20 and JESD22)
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