MMFTP84KW

MMFTP84KW P-Channel Enhancement Mode MOSFET Features Logic-level compatible Very fast switching Applications Relay driver High-side loadswitch Switching circuits Drain Gate Source 1. Gate 2. Source 3. Drain SOT-323 Plastic Package Absolute Maximum Ratings(Ta = 25℃) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Peak Drain Current, Pulsed Power Dissipation 1) Thermal Resistance from Juntion to Ambient Operating Junction Temperature Range Storage Temperature Range 1) FR-5 = 1.0 × 0.75 × 0.062 in. Symbol -VDS VGS -ID -IDM PD RθJA Tj Tstg Value 50 ± 20 130 520 200 625 - 55 to + 150 - 55 to + 150 Unit V V mA mA mW ℃/W ℃ ℃ ® Dated: 06/08/2019 Rev：01 MMFTP84KW Characteristics at Ta= 25℃ unless otherwise specified Parameter Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage at -ID = 250 µA Zero Gate Voltage Drain Current at -VDS = 25 V at -VDS = 50 V Gate-Source Leakage at VGS = ± 20 V Gate-Source Threshold Voltage at VDS = VGS, -ID = 250 µA Drain-Source On-State Resistance at -VGS = 5 V, -ID = 100 mA Forward Transconductance at -VDS = 25 V, -ID = 100 mA, f = 1KHz Input Capacitance at -VDS = 5 V Output Capacitance at -VDS = 5 V Reverse Transfer Capacitance at -VDS = 5 V Turn-On Rise Time at -VDD = 15 V, -ID = 2.5 A, RL = 50 Ω Turn-On Rise Time at -VDD = 15 V, -ID = 2.5 A, RL = 50 Ω Turn-Off Delay Time at -VDD = 15 V, -ID = 2.5 A, RL = 50 Ω Turn-Off Fall Time at -VDD = 15 V, -ID = 2.5 A, RL = 50 Ω -V(BR)DSS 50 -IDSS IGS...