IAUT300N08S5N012
OptiMOS™-5 Power-Transistor
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C...
IAUT300N08S5N012
OptiMOS™-5 Power-
Transistor
Features N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested
Product Summary VDS RDS(on) ID
80 V 1.2 m 300 A
H-PSOF-8-1 Tab
8
1
Tab
1 8
Type
Package
IAUT300N08S5N012 P/G-HSOF-8-1
Marking 5N08012
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
ID
T C=25°C, V GS=10V1)
T C=100 °C, V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse2)
E AS
I D=150 A
Avalanche current, single pulse
I AS
-
Gate source voltage
V GS
-
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
Unit
300
A
300
1200
817
mJ
300
A
±20
V
375
W
-55 ... +175
°C
55/175/56
Rev. 1.0
page 1
2016-11-29
IAUT300N08S5N012
Parameter
Symbol
Conditions
Thermal characteristics2) Thermal resistance, junction - case R thJC -
min.
Values typ.
Unit max.
-
-
0.4 K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage2)
V (BR)DSS
V GS=0 V, I D=1 mA
80
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=275 µA
2.2
3
3.8
Zero gate voltage drain current2)
I DSS
V DS=80 V, V GS=0 V, T j=25 °C
-
0.1
1 µA
V DS=50 V, V GS=0 V, T j=85 °C2)
...
