Control Thyristor. T2351N Datasheet

T2351N Thyristor. Datasheet pdf. Equivalent

Part T2351N
Description Phase Control Thyristor
Feature Netz-Thyristor Phase Control Thyristor Technische Information / technical information T2351N ennda.
Manufacture Infineon
Datasheet
Download T2351N Datasheet



T2351N
Netz-Thyristor
Phase Control Thyristor
Technische Information /
technical information
T2351N
enndaten
Key Parameters
VDRM / VRRM
ITAVM
ITSM
VT0
rT
RthJC
Clamping Force
Max. Diameter
Contact Diameter
Height
4200 V / 5200 V
2250 A (TC=85°C)
35557000A0 A(TC=55°C)
0,81 V
0,347 mΩ
6,0 K/kW
45 … 65 kN
121 mm
86 mm
26 mm
For type designation please refer to actual shortform
catalog
http://www.ifbip.com/catalog
Merkmale
Features
Volle Sperrfähigkeit 50/60Hz über einen weiten
Temperaturbereich
Hohe DC Sperrstabilität
Hohe Stoßstrombelastbarkeit
Hoher Gehäusebruchstrom
Hohe Einschalt di/dt Fähigkeit
Full blocking 50/60Hz over a wide range temperature
range
High DC blocking stability
High surge current capability
High case non-rupture current
High di/dt capability
Typische Anwendungen
Mittelspannungssanftanlasser
Gleichrichter für Antriebsapplikationen
Mittelspannungsumrichter
Lastgeführte Umrichter
Direktumrichter
Typical Applications
Medium Voltage Softstarter
Rectifier for Drives Applications
Medium Voltage Drives
Load Commutating Inverter
Cyclcoconverter
content of customer DMX code
DMX code
DMX code
serial number
digit
digit quantity
1
1..7
7
SP material number
8..16
9
datecode (production day)
17..18
2
datecode (production year)
19..20
2
datecode (production month)
21..22
2
vT class (optional)
23..26
4
QR class (optional)
27..30
4
Date of Publication: 2015-09-18
Revision: 7.1
45
2
www.ifbip.com
support@infineon-bip.com
Seite/page: 1/11



T2351N
Technische Information /
technical information
Netz-Thyristor
Phase Control Thyristor
T2351N
Elektrische Eigenschaften / electrical properties
Höchstzulässige Werte / maximum rated values
Elektrische Eigenschaften Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C... Tvj max
repetitive peak forward off-state and reverse voltage
VDRM,VRRM
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
TC = 85 °C
ITRMSM
TC = 85 °C
TC = 70 °C
TC = 55 °C
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
DIN IEC 60747-6
f = 50 Hz, iGM = 3 A, diG/dt = 6 A/µs
Tvj = Tvj max, vD = 0,67 VDRM
5.Kennbuchstabe / 5th letter H
ITAVM
ITSM
I²t
(diT/dt)cr
(dvD/dt)cr
4200 V
4800 V
5000 V
5200
3530 A
2250 A
2710 A
3110 A
55000 A
54000 A
15100 10³ A²s
14600 10³ A²s
300 A/µs
2000 V/µs
Charakteristische Werte / characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlaßkennlinie
on-state characteristic
300A iF 3500A
v T A B iT C Ln ( iT 1) D iT
Tvj = Tvj max , iT = 3000A
Tvj = Tvj max
Tvj = Tvj max
Tvj = Tvj max
vT
V(TO)
rT
typ.
max.
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
Zündverzug
gate controlled delay time
Tvj = 25°C, vD = 12 V
IGT
Tvj = 25°C, vD = 12 V
VGT
Tvj = Tvj max , vD = 12 V
Tvj = Tvj max , vD = 0,5 VDRM
Tvj = Tvj max , vD = 0,5 VDRM
IGD
VGD
Tvj = 25°C, vD = 12 V
IH
Tvj = 25°C, vD = 12 V, RGK ≥ 10 Ω
iGM = 3 A, diG/dt = 6 A/µs, tg = 20 µs
Tvj = Tvj max
vD = VDRM, vR = VRRM
DIN IEC 60747-6
Tvj = 25 °C,iGM = 3 A, diG/dt = 6 A/µs
IL
iD, iR
tgd
prepared by: TM
approved by: MS
date of publication: 2015-09-18
revision:
7.1
Date of Publication: 2015-09-18
Revision: 7.1
typ. 1,7 V
Max. 1,85 V
typ. 0,7 V
max. 0,81 V
typ. 0,333 mΩ
Max. 0,347 mΩ
A 0,452
B 0,000106
C -0,0063
D 0,0179
A -0,109
B 0,000195
C 0,139
D 0,00471
max. 350 mA
max. 2,5 V
max.
max.
max.
20 mA
10 mA
0,4 V
max. 350 mA
max.
3A
max. 500 mA
max.
2 µs
Seite/page: 2/11





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)