Control Thyristor. T2001N Datasheet

T2001N Thyristor. Datasheet pdf. Equivalent

Part T2001N
Description Phase Control Thyristor
Feature Netz-Thyristor Phase Control Thyristor Technische Information / technical information T2001N Key P.
Manufacture Infineon
Datasheet
Download T2001N Datasheet



T2001N
Netz-Thyristor
Phase Control Thyristor
Technische Information /
technical information
T2001N
Key Peanranmdaetteenrs
VDRM / VRRM
ITAVM
ITSM
vT0
rT
RthJC
Clamping Force
Max. Diameter
Contact Diameter
Height
3200V … 3600V
2060A (TC=85°C)
34547000A0A(TC=55°C)
1,0V
0,25mΩ
8,0K/kW
36 … 52kN
121mm
86mm
26mm
For type designation please refer to actual shortform
catalog
http://www.ifbip.com/catalog
Merkmale
Features
Volle Sperrfähigkeit 50/60Hz über einen weiten
Temperaturbereich
Hohe DC Sperrstabilität
Hohe Stoßstrombelastbarkeit
Hoher Gehäusebruchstrom
Hohe Einschalt di/dt Fähigkeit
Full blocking 50/60Hz over a wide range temperature
range
High DC blocking stability
High surge current capability
High case non-rupture current
High di/dt capability
Typische Anwendungen
Hochstrom-Gleichrichter
Gleichrichter für Antriebsapplikationen
Mittelspannungsumrichter
Lastgeführte Umrichter
Direktumrichter
Typical Applications
High Current Rectifier
Rectifier for Drives Applications
Medium Voltage Drives
Load Commutating Inverter
Cyclcoconverter
content of customer DMX code
DMX code
DMX code
digit
digit quantity
1
serial number
1..7
7
SP material number
8..16
9
datecode (production day)
17..18
2
datecode (production year)
19..20
2
datecode (production month)
21..22
2
vT class
23..26
4
QR class
27..30
4
Date of Publication: 2011-05-02
Revision: 7.0
45
2
www.ifbip.com
support@infineon-bip.com
Seite/page: 1/11



T2001N
Technische Information /
technical information
Netz-Thyristor
Phase Control Thyristor
T2001N
Elektrische Eigenschaften / electrical properties
Höchstzulässige Werte / maximum rated values
Elektrische Eigenschaften Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C... Tvj max
repetitive peak forward off-state and reverse voltage
VDRM,VRRM
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
TC = 85 °C
ITRMSM
TC = 85 °C
TC = 70 °C
TC = 55 °C
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
DIN IEC 60747-6
f = 50 Hz, iGM = 3 A, diG/dt = 6 A/µs
Tvj = Tvj max, vD = 0,67 VDRM
5.Kennbuchstabe / 5th letter H
ITAVM
ITSM
I²t
(diT/dt)cr
(dvD/dt)cr
3200 V
3400 V
3600 V
3200 A
2040 A
2490 A
2890 A
44000 A
41000 A
9680 10³ A²s
8400 10³ A²s
300 A/µs
1000 V/µs
Charakteristische Werte / characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlaßkennlinie
on-state characteristic
200A iF 2500A
Tvj = Tvj max , iT = 2000A
Tvj = Tvj max
Tvj = Tvj max
Tvj = Tvj max
vT
V(TO)
rT
typ.
max.
v T A B iT C Ln ( iT 1) D iT
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
Zündverzug
gate controlled delay time
Tvj = 25°C, vD = 12 V
IGT
Tvj = 25°C, vD = 12 V
VGT
Tvj = Tvj max , vD = 12 V
Tvj = Tvj max , vD = 0,5 VDRM
Tvj = Tvj max , vD = 0,5 VDRM
IGD
VGD
Tvj = 25°C, vD = 12 V
IH
Tvj = 25°C, vD = 12 V, RGK ≥ 10 Ω
iGM = 3 A, diG/dt = 6 A/µs, tg = 20 µs
Tvj = Tvj max
vD = VDRM, vR = VRRM
DIN IEC 60747-6
Tvj = 25 °C,iGM = 3 A, diG/dt = 6 A/µs
IL
iD, iR
tgd
prepared by: TM
approved by: JP
date of publication: 2011-05-02
revision:
7.0
typ. 1,35 V
Max. 1,5 V
typ.
max.
0,9 V
1V
typ. 0,225 mΩ
Max. 0,250 mΩ
A -0,0978
B 0,000187
C 0,15
D -0,00173
A -0,0981
B 0,000153
C 0,143
D 0,00466
max. 350 mA
max. 2,5 V
max.
max.
max.
20 mA
10 mA
0,4 V
max. 350 mA
max.
3A
max. 400 mA
max. 1,5 µs
Date of Publication: 2011-05-02
Revision: 7.0
Seite/page: 2/11





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