Control Thyristor. T501N Datasheet

T501N Thyristor. Datasheet pdf. Equivalent

Part T501N
Description Phase Control Thyristor
Feature Netz-Thyristor Phase Control Thyristor Technische Information / technical information T501N Key Pe.
Manufacture Infineon
Datasheet
Download T501N Datasheet



T501N
Netz-Thyristor
Phase Control Thyristor
Technische Information /
technical information
T501N
Key Peanranmdaetteenrs
VDRM / VRRM
ITAVM
ITSM
vT0
rT
RthJC
Clamping Force
Max. Diameter
Contact Diameter
Height
6000V … 7000V
640A (TC=85°C)
31537500A0A(TC=55°C)
1,3V
1,35mΩ
17,0K/kW
15 … 24kN
76mm
50mm
26mm
For type designation please refer to actual shortform
catalog
http://www.ifbip.com/catalog
Merkmale
Features
Volle Sperrfähigkeit 50/60Hz über einen weiten
Temperaturbereich
Hohe DC Sperrstabilität
Hohe Stoßstrombelastbarkeit
Hoher Gehäusebruchstrom
Hohe Einschalt di/dt Fähigkeit
Full blocking 50/60Hz over a wide range temperature
range
High DC blocking stability
High surge current capability
High case non-rupture current
High di/dt capability
Typische Anwendungen
Mittelspannungssanftanlasser
Statische Kompensation SVC
Gleichrichter für Antriebsapplikationen
Lastgeführte Umrichter
Kurzschließer-Applikationen
Typical Applications
Medium Voltage Softstarter
Static Var Compensation SVC
Rectifier for Drives Applications
Load Commutating Inverter
Crowbar Applications
content of customer DMX code
DMX code
DMX code
1
digit
digit quantity
serial number
1..7
7
SP material number
8..16
9
datecode (production day)
17..18
2
datecode (production year)
19..20
2
datecode (production month)
21..22
2
vT class
23..26
4
QR class
27..30
4
Date of Publication: 2011-05-02
Revision: 11.0
45
2
www.ifbip.com
support@infineon-bip.com
Seite/page: 1/11



T501N
Technische Information /
technical information
Netz-Thyristor
Phase Control Thyristor
T501N
Elektrische Eigenschaften / electrical properties
Höchstzulässige Werte / maximum rated values
Elektrische Eigenschaften Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C... Tvj max
repetitive peak forward off-state and reverse voltage
VDRM,VRRM
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
TC = 85 °C
ITRMSM
TC = 85 °C
TC = 70 °C
TC = 55 °C
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
DIN IEC 60747-6
f = 50 Hz, iGM = 3 A, diG/dt = 6 A/µs
Tvj = Tvj max, vD = 0,67 VDRM
5.Kennbuchstabe / 5th letter H
ITAVM
ITSM
I²t
(diT/dt)cr
(dvD/dt)cr
6000 V
6500 V
7000 V
1000 A
640 A
770 A
890 A
13500 A
13000 A
910 10³ A²s
845 10³ A²s
300 A/µs
2000 V/µs
Charakteristische Werte / characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlaßkennlinie
on-state characteristic
100A iF 1200A
v T A B iT C Ln ( iT 1) D iT
Tvj = Tvj max , iT = 1000A
Tvj = Tvj max
Tvj = Tvj max
Tvj = Tvj max
vT
V(TO)
rT
typ.
max.
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
Zündverzug
gate controlled delay time
Tvj = 25°C, vD = 12 V
IGT
Tvj = 25°C, vD = 12 V
VGT
Tvj = Tvj max , vD = 12 V
Tvj = Tvj max , vD = 0,5 VDRM
Tvj = Tvj max , vD = 0,5 VDRM
IGD
VGD
Tvj = 25°C, vD = 12 V
IH
Tvj = 25°C, vD = 12 V, RGK ≥ 10 Ω
iGM = 3 A, diG/dt = 6 A/µs, tg = 20 µs
Tvj = Tvj max
vD = VDRM, vR = VRRM
DIN IEC 60747-6
Tvj = 25 °C,iGM = 3 A, diG/dt = 6 A/µs
IL
iD, iR
tgd
prepared by: TM
approved by: JP
date of publication: 2011-05-02
revision:
11.0
typ. 2,55 V
Max. 2,65 V
typ. 1,25 V
max. 1,3 V
typ. 1,3 mΩ
Max. 1,35 mΩ
A -0,0927
B 0,000967
C 0,1815
D 0,01334
A -0,0921
B 0,001
C 0,1841
D 0,0149
max. 350 mA
max. 2,5 V
max.
max.
max.
20 mA
10 mA
0,4 V
max. 350 mA
max.
3A
max. 200 mA
max.
2 µs
Date of Publication: 2011-05-02
Revision: 11.0
Seite/page: 2/11





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