Bar Diode. D1721NH Datasheet

D1721NH Diode. Datasheet pdf. Equivalent

Part D1721NH
Description Crow Bar Diode
Feature Umschwingdiode Crow Bar Diode Technische Information / technical information D1721NH Key Peanranmd.
Manufacture Infineon
Datasheet
Download D1721NH Datasheet



D1721NH
Umschwingdiode
Crow Bar Diode
Technische Information /
technical information
D1721NH
Key Peanranmdaetteenrs
VRRM
IFAVM
IFSM
VT0
rT
RthJC
Clamping Force
Max. Diameter
Contact Diameter
Height
9000 V
1670 A (TC=85 °C)
33557000A0 A(TC=55°C)
1,36 V
0,61 mΩ
7,5 K/kW
36 52 kN
121 mm
86 mm
26 mm
For type designation please refer to actual
short form catalog
http://www.ifbip.com/catalog
Merkmale
Volle Sperrfähigkeit 50/60Hz über einen weiten
Temperaturbereich
Hohe DC Sperrstabilität
Hohe Stoßstrombelastbarkeit
Hoher Gehäusebruchstrom
Sanftes Ausschaltverhalten bei hohen
Stromsteilheiten
Features
Full blocking capability 50/60Hz over a wide
temperature range
High DC blocking stability
High surge current capability
High case non-rupture current
Soft turn-off behavior at high turn-off di/dt
Typische Anwendungen
Rückschwing- Diode für
Spannungszwischenkreisumrichter
Typical Applications
Ringback diode for voltage source converter
content of customer DMX code
serial number
SP material number
datecode (production day)
datecode (production year)
datecode (production month)
vT class (optional)
QR class (optional)
DMX code
digit
1..7
8..16
17..18
19..20
21..22
23..26
27..30
DMX code
digit quantity
7
9
2
2
2
4
4
Date of Publication: 2014-06-01
Revision: 4.0
1
2
www.ifbip.com
support@infineon-bip.com
Seite/page 1/10



D1721NH
Technische Information /
technical information
Umschwingdiode
Crow Bar Diode
D1721NH
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
PreepreiKotidteiivnsecnhdpeeaaRtencrekvweärrstes-vSopltitazgeensperrspannung
Tvj = 0°C... Tvj max
VRRM
Elektrische Eigenschaften Durchlaßstrom-Grenzeffektivwert
TC = 85°C
IFRMSM
maximum RMS on-state current
Dauergrenzstrom
average on-state current
TC = 85°C, f=50Hz
TC = 70°C, f=50Hz
TC = 55°C, f=50Hz
IFAVM
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Max. Ausschaltverluste
max. turn-off losses
Tvj = 25 °C, tP = 10 ms
IFSM
Tvj = Tvj max, tP = 10 ms
Tvj = 25 °C, tP = 10 ms
I²t
Tvj = Tvj max, tP = 10 ms
Tvj = Tvjmax
PRQ
IFM = 2500A, VCL = 2200V
clamp circuit LS ≤ 0,25µH
RCL = 12, CCL = 1µF
DCL = 34DSH65
8500 V
9000 V
2620 A
1670 A
1920 A
2160 A
35000 A
34000 A
6125 10³ A²s
5780 10³ A²s
5 MW
Charakteristische Werte / Characteristic values
Gleichsperrspannung
continuous direct reverse voltage
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlaßkennlinie
on-state characteristic
400A iF 5000A
failure rate < 100
Tvj = Tvj max , iF = 4000A
Tvj = Tvj max
Tvj = Tvj max
Tvj = Tvj max
v F ABi F CLn (i F 1) DiF
Sperrstrom
reverse current
Sperrverzögerungsladung
recovered charge
Rückstromspitze
peak reverse recovery current
Ausschaltverlust Energie
turn-off energy
Tvj = Tvj max, vR = VRRM
Tvj = Tvjmax
IFM = 2500A, VR = 2200V
-di/dt = 1000A/µs
R = 12Ω, C = 1µF
DCL = 34DSH65
VR(D)
estimate 4100 V
value
vF
typ. 3,55 V
max. 3,80 V
V(TO)
typ. 1,27 V
max. 1,36 V
rT
typ. 0,57 mΩ
max. 0,61 mΩ
typ. A 0,69987
B 0,0003047
C -0,008465
D 0,027038
max. A 0,69962
B 0,0003319
C 0,00188
D 0,02787
iR
max. 150 mA
Qr
max. 14000 mAs
IRM
max. 2300 A
WRQ
max. 30 Ws
prepared by: TM
approved by: JP
Date of Publication: 2014-06-01
date of publication: 2014-06-01
revision:
4.0
Revision: 4.0
Seite/page 2/10





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)