Control Thyristor. TT120N16SOF Datasheet

TT120N16SOF Thyristor. Datasheet pdf. Equivalent

Part TT120N16SOF
Description Phase Control Thyristor
Feature Netz-Thyristor-Modul Phase Control Thyristor Module Technische Information / technical information .
Manufacture Infineon
Datasheet
Download TT120N16SOF Datasheet



TT120N16SOF
Netz-Thyristor-Modul
Phase Control Thyristor Module
Technische Information /
technical information
TT120N16SOF
Key Parameters
VDRM / VRRM
ITAVM
ITSM
VT0
rT
RthJC
Base plate
Weight
1600 V
120 A (TC=85 °C)
32257500AA(TC=55°C)
0,9 V
3,35 mΩ
0,19 K/W
20 mm
75 g
Merkmale
Löt-Löt Technologie
Industrie-Standard-Gehäuse
Elektrisch isolierte Bodenplatte
Typische Anwendungen
Sanftanlasser
Gleichrichter für Antriebsapplikationen
Leistungssteller
Gleichrichter für UPS
Batterieladegleichrichter
Statische Umschalter
For type designation please refer to actual
short form catalog
http://www.ifbip.com/catalog
Features
Solder-Solder Technology
Industrial standard package
Electrically insulated base plate
Typical Applications
Soft starter
Rectifier for drives applications
Power controllers
Rectifiers for UPS
Battery chargers
Static switches
content of customer DMX code
type designation
serial number
internal production order number
material number
date code (YY/WW)
add on for date code
DMX code
digit
1..18
19..23
24..31
32..41
42..45
46
DMX code
digit quantity
18
5
8
10
4
1
Date of Publication 2017-08-23
Revision: 3.5
TT
TD
www.ifbip.com
support@infineon-bip.com
Seite/page: 1/11



TT120N16SOF
Netz-Thyristor-Modul
Phase Control Thyristor Module
Technische Information /
technical information
TT120N16SOF
TT120N16SOF
TD120N16SOF
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C... Tvj max
repetitive peak forward off-state and reverse voltages
TT120N16SOFB01
VDRM,VRRM
Vorwärts-Stoßspitzensperrspannung
non-repetitive peak forward off-state voltage
Rückwärts-Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
Tvj = -40°C... Tvj max
VDSM
Tvj = +25°C... Tvj max
VRSM
ITRMSM
TC = 85°C
ITAVM
Tvj = 25°C, tP = 10ms
ITSM
Tvj = 25°C, tP = 10ms
I²t
DIN IEC 60747-6
f = 50Hz, iGM = 1A, diG/dt = 1A/µs
Tvj = Tvj max, vD = 0,67 VDRM
6.Kennbuchstabe / 6th letter F
(diT/dt)cr
(dvD/dt)cr
1600 V
1600 V
1700 V
190 A
119 A
2250 A
25313 A²s
140 A/µs
1000 V/µs
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
Zündverzug
gate controlled delay time
Tvj = 25°C iT = 300 A
vT
Tvj = Tvj max
V(TO)
Tvj = Tvj max
rT
Tvj = 25°C, vD = 12V
IGT
Tvj = 25°C, vD = 12V
VGT
Tvj = Tvj max , vD = 12V
Tvj = Tvj max , vD = 0,5 VDRM
Tvj = Tvj max , vD = 0,5 VDRM
IGD
VGD
Tvj = 25°C, vD = 12V, RA = 1Ω
IH
Tvj = 25°C, vD = 12V, RGK ≥ 10Ω
iGM = 1A, diG/dt = 1A/µs, tg = 20µs
Tvj = Tvj max
vD = VDRM, vR = VRRM
DIN IEC 60747-6
Tvj = 25°C, iGM = 1A, diG/dt = 1A/µs
IL
iD, iR
tgd
max. 1,75 V
max. 0,9 V
max. 3,35 mΩ
max. 100 mA
max. 2,5 V
max.
max.
max.
4 mA
2 mA
0,25 V
max. 250 mA
max. 600 mA
max. 20 mA
max.
1 µs
prepared by: AG
approved by: MS
date of publication: 2017-08-23
revision:
3.5
Date of Publication 2017-08-23
Revision: 3.5
Seite/page: 2/11





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