Control Thyristor. TT210N Datasheet

TT210N Thyristor. Datasheet pdf. Equivalent

Part TT210N
Description Phase Control Thyristor
Feature Netz-Thyristor-Modul Phase Control Thyristor Module Technische Information / technical information .
Manufacture Infineon
Datasheet
Download TT210N Datasheet



TT210N
Netz-Thyristor-Modul
Phase Control Thyristor Module
Technische Information /
technical information
TT210N
Key Parameters
VDRM / VRRM
ITAVM
ITSM
VT0
rT
RthJC
Base plate width
1200 1800 V
210 A (TC=85 °C)
36657000AA(TC=55°C)
1,0 V
0,85 mΩ
0,124 K/W
50 mm
Merkmale
Druckkontakt-Technologie für hohe
Zuverlässigkeit
Industrie-Standard-Gehäuse
Elektrisch isolierte Bodenplatte
Typische Anwendungen
Sanftanlasser
Gleichrichter für Antriebsapplikationen
Kurzschließer-Applikationen
Leistungssteller
Gleichrichter für UPS
Batterieladegleichrichter
Statische Umschalter
For type designation please refer to actual
short form catalog
http://www.ifbip.com/catalog
Features
Pressure contact technology for high reliability
Industrial standard package
Electrically insulated base plate
Typical Applications
Soft starters
Rectifier for drives applications
Crowbar applications
Power controllers
Rectifiers for UPS
Battery chargers
Static switches
content of customer DMX code
DMX code DMX code
digit
digit quantity
TT
serial number
1..5
5
SAP material number
6..12
7
Internal production order number
13..20
8
datecode (production year)
21..22
2
datecode (production week)
23..24
2
Date of Publication 2012-12-19
Revision: 3.1
TD
Seite/page 1/11



TT210N
Netz-Thyristor-Modul
Phase Control Thyristor Module
Technische Information /
technical information
TT210N
TT210N...
TD210N...
Kenndaten
Elektrische Eigenschaften Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C... Tvj max
repetitive peak forward off-state and reverse voltages
VDRM,VRRM 1200
1600
1400 V
1800 V
Vorwärts-Stoßspitzensperrspannung
non-repetitive peak forward off-state voltage
Tvj = -40°C... Tvj max
VDSM
1200
1600
1400 V
1800 V
Rückwärts-Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Tvj = +25°C... Tvj max
VRSM
1300
1800
1500 V
1900 V
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
ITRMSM
TC = 85°C
TC = 73°C
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
DIN IEC 747-6
f = 50 Hz, iGM = 1 A, diG/dt = 1 A/µs
Tvj = Tvj max, vD = 0,67 VDRM
6.Kennbuchstabe / 6th letter F
ITAVM
ITSM
I²t
(diT/dt)cr
(dvD/dt)cr
410 A
210 A
261 A
6.600 A
5.800 A
218.000 A²s
168.000 A²s
150 A/µs
1000 V/µs
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
Zündverzug
gate controlled delay time
Tvj = Tvj max , iT = 700 A
vT
Tvj = Tvj max
V(TO)
Tvj = Tvj max
rT
Tvj = 25°C, vD = 12 V
IGT
Tvj = 25°C, vD = 12 V
VGT
Tvj = Tvj max , vD = 12 V
Tvj = Tvj max , vD = 0,5 VDRM
Tvj = Tvj max , vD = 0,5 VDRM
IGD
VGD
Tvj = 25°C, vD = 12 V, RA = 1 Ω
IH
Tvj = 25°C, vD = 12 V, RGK ≥ 10 Ω IL
iGM = 1 A, diG/dt = 1 A/µs, tg = 20 µs
Tvj = Tvj max
vD = VDRM, vR = VRRM
iD, iR
DIN IEC 747-6
tgd
Tvj = 25 °C,iGM = 1 A, diG/dt = 1 A/µs
max. 1,65 V
max. 1,0 V
max. 0,85 mΩ
max. 200 mA
max.
2V
max.
max.
max.
10 mA
5 mA
0,2 V
max. 300 mA
max. 1200 mA
max. 50 mA
max.
3 µs
prepared by: CD
approved by: ML
Date of Publication 2012-12-19
date of publication: 19.12.12
revision:
3.1
Revision: 3.1
Seite/page 2/11





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