TIM1414-2L

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 33.5dBm at 14.0GHz to 14.5GHz ･HIGH GAIN G1dB= 7.5dB at 14.0GHz to 14.5GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1414-2L RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current SYMBOL CONDITIONS P1dB G1dB IDS1 VDS= 9V IDSset= 1.0A f= 14.0 to 14.5GHz UNIT dBm dB A Gain Flatness G dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 22.0dBm, f= 5MHz (Single Carrier Level) A Channel Temperature Rise Tch (VDS X IDS + Pin – P1dB) X Rth(c-c) °C Recommended Gate Resistance(Rg): 150  MIN. 32.5 6.5    -42   TYP. MAX. 33.5  7.5  0.85 1.1  ±0.8 24  -45  0.85 1.1  60 ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS CONDITIONS VDS= 3V IDS= 1.0A VDS= 3V IDS= 30mA VDS= 3V VGS= 0V VGSO IGS= -30A Rth(c-c) Channel to Case UNIT MIN. TYP. MAX. S  0.6  V -2.0 -3.5 -5.0 A  2.0  V -5   °C/W  5.0 6.0  The information contained herein is presented as guidance for product use. No responsibility is assumed by TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (hereinafter, referred to as “TISS”) for any infringement of patents or any...