MICROWAVE POWER GaN HEMT
TGI8596-50
FEATURES
ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER
Pout= 47.0dBm at Pin= 41dBm ŋHIGH GAIN
GL= 9.0dB at Pin= 20dBm ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
CONDITIONS
UNIT MIN. TYP. MAX.
Output Power Drain Current Power Added Efficiency
Pout IDS add
VDS= 2...
