MICROWAVE POWER GaN HEMT
MICROWAVE POWER GaN HEMT
TGI7179-130LHA
FEATURES
ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER
Pout= 51.0dBm at Pin= 4...
Description
MICROWAVE POWER GaN HEMT
TGI7179-130LHA
FEATURES
ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER
Pout= 51.0dBm at Pin= 43.5dBm ŋHIGH GAIN
GL= 12.0dB at Pin= 20dBm ŋLOW INTERMODULATION DISTORTION
IM3= -25dBc(Min.) at Pout= 44dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
CONDITIONS
UNIT MIN. TYP. MAX.
Output Power Drain Current Power Added Efficiency
Pout IDS1 add
VDS= 40V IDSset= 0.8A f= 7.1 to 7.9GHz @Pin= 43.5dBm
dBm 50.0 51.0
A
7.0
9.0
%
36
Linear Gain Gain flatness
GL @Pin= 20dBm
G
dB
11.0 12.0
dB
±0.8
3rd Order Intermodulation Distortion
Drain Current Channel Temperature Rise *1
IM3 IM3-2 IDS2 Tch
Two-Tone Test Po= 44dBm (Single Carrier Level) ∆f= 5MHz (IM3) f= 150MHz (IM3-2)
dBc
-25
-30
dBc
-25
-27
A
5.0
°C
120 140
Recommended Gate Resistance(Rg): 10 *1: ∆Tch (VDS IDS2 Pin(two-tone) Po(two-tone)) Rth(c-c), calculated using parameters of IM3 test
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current
SYMBOL gm
VGSoff IDSS
CONDITIONS
VDS= 5V IDS= 10.0A VDS= 5V IDS= 30mA VDS= 5V VGS= 0V
Gate-Source Breakdown Voltage
VGSO IGS= -25mA
Thermal Resistance
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
S
8.0
V
-2.0 -3.0 -5.0
A
20
V
-10
°C/W
0.8
1.0
The information contained herein is presented as guidance for product use...
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