GaAs FET. TIM7785-60SL Datasheet

TIM7785-60SL FET. Datasheet pdf. Equivalent

Part TIM7785-60SL
Description MICROWAVE POWER GaAs FET
Feature MICROWAVE POWER GaAs FET TIM7785-60SL FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= .
Manufacture Toshiba
Datasheet
Download TIM7785-60SL Datasheet



TIM7785-60SL
MICROWAVE POWER GaAs FET
TIM7785-60SL
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET
ŋHIGH POWER
P1dB= 48.0dBm at 7.7GHz to 8.5GHz
ŋHIGH GAIN
G1dB= 7.5dB at 7.7GHz to 8.5GHz
ŋLOW INTERMODULATION DISTORTION
IM3(MIN.)= -45dBc at Pout= 36.5dBm (Single Carrier Level)
ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
Output Power at 1dB
Gain Compression Point
Power Gain at 1dB
Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB
IDS1
G
VDS= 10V
IDSset= 9.5A
f= 7.7 to 8.5GHz
UNIT
dBm
dB
A
dB
Power Added Efficiency
3rd Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
add
IM3
IDS2
Tch
%
Two-Tone Test
Po= 36.5dBm, f= 5MHz
dBc
(Single Carrier Level)
A
(VDS IDS Pin P1dB)
Rth(c-c)
°C
Recommended Gate Resistance(Rg): 28
MIN.
47.0
5.0
-42
TYP. MAX.
48.0
6.0
13.2 15.0
0.8
36
-45
11.8
100
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
SYMBOL
gm
VGSoff
IDSS
CONDITIONS
VDS= 3V
IDS= 12.0A
VDS= 3V
IDS= 200mA
VDS= 3V
VGS= 0V
Gate-Source Breakdown Voltage
VGSO IGS= -1.0mA
Thermal Resistance
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
S
20.0
V
-1.0 -1.8 -3.0
A
38
V
-5
°C/W
0.6
0.8
The information contained herein is presented as guidance for product use. No responsibility is assumed by
Toshiba Infrastructure Systems & Solutions Corporation (hereinafter, referred to as “TISS”) for any infringement of
patents or any other intellectual property rights of third parties that may result from the use of product. No license to
any intellectual property right is granted by this document. The information contained herein is subject to change
without prior notice. It is advisable to contact TISS before proceeding with design of equipment incorporating this
product.
©2020 Toshiba Infrastructure Systems & Solutions Corporation
1_20200127_No1119 Page: 1 / 6



TIM7785-60SL
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
MICROWAVE POWER GaAs FET
TIM7785-60SL
CHARACTERISTICS
SYMBOL
UNIT
RATING
Drain-Source Voltage
VDS
V
15
Gate-Source Voltage
VGS
V
-5
Drain Current
Total Power Dissipation (Tc= 25°C)
Channel Temperature
Storage
IDS
A
20.0
PT
W
187.5
Tch
°C
175
Tstg
°C
-65 to +175
PACKAGE OUTLINE ( 2-16G1B )
Unit in mm
Gate
Source
Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C or 3 seconds at
350°C.
©2020 Toshiba Infrastructure Systems & Solutions Corporation
1_20200127_No1119 Page: 2 / 6





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