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TIM1314-9L Dataheets PDF



Part Number TIM1314-9L
Manufacturers Toshiba
Logo Toshiba
Description MICROWAVE POWER GaAs FET
Datasheet TIM1314-9L DatasheetTIM1314-9L Datasheet (PDF)

MICROWAVE POWER GaAs FET TIM1314-9L FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 39.5dBm at 13.75GHz to 14.5GHz ŋHIGH GAIN G1dB= 6.0dB at 13.75GHz to 14.5GHz ŋLOW INTERMODULATION DISTORTION IM3= -25dBc(Min.) at Pout= 33dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1.

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MICROWAVE POWER GaAs FET TIM1314-9L FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 39.5dBm at 13.75GHz to 14.5GHz ŋHIGH GAIN G1dB= 6.0dB at 13.75GHz to 14.5GHz ŋLOW INTERMODULATION DISTORTION IM3= -25dBc(Min.) at Pout= 33dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 9V IDSset= 2.2A f= 13.75 to 14.5GHz UNIT dBm dB A dB Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise add IM3 IDS2 Tch % Two-Tone Test Po= 33dBm, f= 5MHz dBc (Single Carrier Level) A (VDS  IDS  Pin  P1dB)  Rth(c-c) °C Recommended Gate Resistance(Rg): 150  MIN. 39.0 5.0    -25   TYP. MAX. 39.5  6.0  2.8 3.0  0.8 26    2.8 3.0  80 ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current SYMBOL gm VGSoff IDSS CONDITIONS VDS= 3V IDS= 2.4A VDS= 3V IDS= 72mA VDS= 3V VGS= 0V Gate-Source Breakdown Voltage VGSO IGS= -72A Thermal Resistance Rth(c-c) Channel to Case UNIT MIN. TYP. MAX. S  2.2  V -0.7 -2.0 -4.5 A  5.0  V -5   °C/W  3.0 3.7  The information contained herein is presented as guidance for product use. No responsibility is assumed by Toshiba Infrastructure Systems & Solutions Corporation (hereinafter, referred to as “TISS”) for any infringement of patents or any other intellectual property rights of third parties that may result from the use of product. No license to any intellectual property right is granted by this document. The information contained herein is subject to change without prior notice. It is advisable to contact TISS before proceeding with design of equipment incorporating this product. ©2019 Toshiba Infrastructure Systems & Solutions Corporation 2_20191010_No1282 Page: 1 / 5 ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) MICROWAVE POWER GaAs FET TIM1314-9L CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current Total Power Dissipation (Tc= 25°C) Channel Temperature Storage Temperature IDS A 5.7 PT W 30.0 Tch °C 175 Tstg °C -65 to +175 PACKAGE OUTLINE ( 2-9D1B ) Unit in mm  Gate  Source  Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C or 3 seconds at 350°C. ©2019 Toshiba Infrastructure Systems & Solutions Corporation 2_20191010_No1282 Page: 2 / 5 TYPICAL RF PERFORMANCE ŋPout , Gain , PAE , IDS vs. Pin MICROWAVE POWER GaAs FET TIM1314-9L VDS= 9 V, IDSset= 2.2 A, f= 13.75, 14.1, 14.5 GHz, Ta= +25 ℃ ©2019 Toshiba Infrastructure Systems & Solutions Corporation 2_20191010_No1282 Page: 3 / 5 ŋS-Parameters VDS= 9 V, IDSset= 2.2 A, f= 12.0 to 16.0 GHz, Ta= +25 ℃ MICROWAVE POWER GaAs FET TIM1314-9L S11, S22(dB) S21, S12(dB) S11, S22 VDS=9V, IDS=2.2A 0 -5 -10 -15 -20 S11 -25 S22 -30 12 13 14 15 16 f(GHz) 20 10 0 -10 -20 -30 -40 12 S21, S12 VDS=9V, IDS=2.2A S21 S12 13 14 15 16 f(GHz) ©2019 Toshiba Infrastructure Systems & Solutions Corporation 2_20191010_No1282 Page: 4 / 5 RESTRICTIONS ON PRODUCT USE MICROWAVE POWER GaAs FET TIM1314-9L ŋAll presented data are typical curves/values and for reference only as design guidance. Devices are not necessarily guaranteed at these curves and values. ŋ TISS, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. ŋThis document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. ŋThough TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth therein and (b) the instructions for the application that Product will be used with or for, Customers are.


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