TIM1112-4UL

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.5dBm at 11.7GHz to 12.7GHz ･HIGH GAIN G1dB= 9.5dB at 11.7GHz to 12.7GHz ･LOW INTERMODULATION DISTOTION IM3=-45dBc at Pout= 24.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1112-4UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current SYMBOL CONDITIONS P1dB G1dB IDS1 VDS= 10V IDSset= 1.0A f=11.7 to 12.7 GHz UNIT dBm dB A Gain Flatness G dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 24.0dBm, f= 5MHz (Single Carrier Level) A Channel Temperature Rise Tch (VDS X IDS + Pin – P1dB) X Rth(c-c) °C Recommended Gate Resistance(Rg): 150  MIN. 35.5 8.5    -42   TYP. MAX. 36.5  9.5  1.1 1.6  ±0.8 36  -45  1.1 1.6  60 ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS CONDITIONS VDS= 3V IDS= 1.2A VDS= 3V IDS= 40mA VDS= 3V VGS= 0V VGSO IGS= -40A Rth(c-c) Channel to Case UNIT MIN. TYP. MAX. S  1.2  V -0.5 -2.0 -4.5 A  2.2  V -5   °C/W  3.8 4.4  The information contained herein is presented as guidance for product use. No responsibility is assumed by TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPO...