TIM7179-30UL

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.0dBm at 7.1GHz to 7.9GHz ･HIGH GAIN G1dB= 8.5dB at 7.1GHz to 7.9GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM7179-30UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 6.4A f = 7.1 to 7.9GHz UNIT dBm dB A dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 34.0dBm, f= 5MHz (Single Carrier Level) A Channel Temperature Rise Tch (VDS X IDS + Pin – P1dB) X Rth(c-c) °C Recommended Gate Resistance(Rg): 28  MIN. 44.0 7.5    -44   TYP. MAX. 45.0  8.5  7.0 8.0  0.6 39  -47  7.0 8.0  100 ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current SYMBOL gm VGSoff IDSS CONDITIONS VDS= 3V IDS= 10.0A VDS= 3V IDS= 80mA VDS= 3V VGS= 0V Gate-Source Breakdown Voltage Thermal Resistance VGSO Rth(c-c) IGS= -240A Channel to Case UNIT MIN. TYP. MAX. S  8.0  V -0.5 -2.0 -3.0 A  16.0  V -5   °C/W  1.0 1.5  The information contained herein is presented as guidance for product use. No responsibility is assumed by TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (hereinafter, referred to as “TISS”) for any infringement of patents or any...