TIM7785-25UL

MICROWAVE POWER GaAs FET TIM7785-25UL FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 44.5dBm at 7.7GHz to 8.5GHz ŋHIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz ŋLOW INTERMODULATION DISTORTION IM3= -47dBc at Pout= 33.5dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 5.2A f= 7.7 to 8.5GHz UNIT dBm dB A dB Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise add IM3 IDS2 Tch % Two-Tone Test dBc Po= 33.5dBm, ∆f= 5MHz (Single Carrier Level) A (VDS  IDS  Pin  P1dB)  Rth(c-c) °C Recommended Gate Resistance (Rg): 28  MIN. 43.5 7.5    -44   TYP. MAX. 44.5  8.5  6.8 7.6  0.6 36  -47  5.2 6.0  80 ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS CONDITIONS VDS= 3V IDS= 8.0A VDS= 3V IDS= 80mA VDS= 3V VGS= 0V VGSO IGS= -280A Rth(c-c) Channel to Case UNIT MIN. TYP. MAX. S  5.0  V -1.0 -2.5 -4.0 A  14.4  V -5 °C/W    1.2 1.5  The information contained herein is presented as guidance for product use. No responsibility is assumed by TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION ...